Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Datasheet	MT3S113
Standard Package	1
Manufacturer	Toshiba Semiconductor and Storage
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	5.3V
Frequency - Transition	12.5GHz
Noise Figure (dB Typ @ f)	1.45dB @ 1GHz
Gain	11.8dB
Power - Max	800mW
DC Current Gain (hFE) (Min) @ Ic, Vce	200 @ 30mA, 5V
Current - Collector (Ic) (Max)	100mA
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Supplier Device Package	S-Mini

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BFU768F,115	NXP USA Inc., RF Transistor NPN 2.8V 70mA 220mW Surface Mount 4-DFP,	View
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BFP450H6327XTSA1	Infineon Technologies, RF Transistor NPN 5V 100mA 24GHz 450mW Surface Mount PG-SOT343-4,	View
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MT3S113(TE85L,F)

Part NumberMT3S113(TE85L,F)