Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Datasheet	MT3S113TU
Standard Package	3000
Manufacturer	Toshiba Semiconductor and Storage
Series	-
Packaging	Tape & Reel (TR)
Part Status	Active
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	5.3V
Frequency - Transition	11.2GHz
Noise Figure (dB Typ @ f)	1.45dB @ 1GHz
Gain	12.5dB
Power - Max	900mW
DC Current Gain (hFE) (Min) @ Ic, Vce	200 @ 30mA, 5V
Current - Collector (Ic) (Max)	100mA
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	3-SMD, Flat Leads
Supplier Device Package	UFM

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BFU690F,115	NXP USA Inc., RF Transistor NPN 5.5V 100mA 18GHz 230mW Surface Mount 4-DFP,	View
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NSVF3007SG3T1G	ON Semiconductor, RF Transistor NPN 12V 30mA 8GHz 350mW Surface Mount 3-MCPH, Automotive, AEC-Q101	View
BFP540H6327XTSA1	Infineon Technologies, RF Transistor NPN 5V 80mA 30GHz 250mW Surface Mount PG-SOT343-4,	View
2SC5085-Y(TE85L,F)	Toshiba Semiconductor and Storage, RF Transistor NPN 12V 80mA 7GHz 100mW Surface Mount USM,	View
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MT3S113TU,LF

Part NumberMT3S113TU,LF