MT3S111(TE85L,F)
MT3S111(TE85L,F)
Part Number MT3S111(TE85L,F)
Description RF TRANS NPN 6V 11.5GHZ SMINI
Package / Case TO-236-3, SC-59, SOT-23-3
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description RF Transistor NPN 6V 100mA 11.5GHz 700mW Surface Mount S-Mini
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MT3S111(TE85L,F) - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Datasheet MT3S111
Standard Package 1
Manufacturer Toshiba Semiconductor and Storage
Series -
Packaging Cut Tape (CT)
Part Status Active
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 6V
Frequency - Transition 11.5GHz
Noise Figure (dB Typ @ f) 1.2dB @ 1GHz
Gain 12dB
Power - Max 700mW
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 30mA, 5V
Current - Collector (Ic) (Max) 100mA
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package S-Mini
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