Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Datasheet	MT3S111
Standard Package	1
Manufacturer	Toshiba Semiconductor and Storage
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	6V
Frequency - Transition	11.5GHz
Noise Figure (dB Typ @ f)	1.2dB @ 1GHz
Gain	12dB
Power - Max	700mW
DC Current Gain (hFE) (Min) @ Ic, Vce	200 @ 30mA, 5V
Current - Collector (Ic) (Max)	100mA
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Supplier Device Package	S-Mini

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BFP650FH6327XTSA1	Infineon Technologies, RF Transistor NPN 4.5V 150mA 42GHz 500mW Surface Mount 4-TSFP,	View
MMBTH10LT1G	ON Semiconductor, RF Transistor NPN 25V 650MHz 225mW Surface Mount SOT-23-3 (TO-236),	View
BFR181WH6327XTSA1	Infineon Technologies, RF Transistor NPN 12V 20mA 8GHz 175mW Surface Mount PG-SOT323-3,	View
BFU520WX	NXP USA Inc., RF Transistor NPN 12V 30mA 10GHz 450mW Surface Mount SOT-323-3, Automotive, AEC-Q101	View
MMBTH24-7-F	Diodes Incorporated, RF Transistor NPN 40V 50mA 400MHz 300mW Surface Mount SOT-23-3,	View
BFP540FESDH6327XTSA1	Infineon Technologies, RF Transistor NPN 5V 80mA 30GHz 250mW Surface Mount 4-TSFP,	View
2SC5488A-TL-H	ON Semiconductor, RF Transistor NPN 10V 70mA 7GHz 100mW Surface Mount 3-SSFP,	View
2SC5227A-4-TB-E	ON Semiconductor, RF Transistor NPN 10V 70mA 7GHz 200mW Surface Mount 3-CP,	View
2SC5085-Y(TE85L,F)	Toshiba Semiconductor and Storage, RF Transistor NPN 12V 80mA 7GHz 100mW Surface Mount USM,	View
BFP420H6327XTSA1	Infineon Technologies, RF Transistor NPN 5V 35mA 25GHz 160mW Surface Mount SOT-343,	View

MT3S111(TE85L,F)

Part NumberMT3S111(TE85L,F)