Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Datasheet	BFR183
Standard Package	1
Manufacturer	Infineon Technologies
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	12V
Frequency - Transition	8GHz
Noise Figure (dB Typ @ f)	0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz
Gain	17.5dB
Power - Max	450mW
DC Current Gain (hFE) (Min) @ Ic, Vce	70 @ 15mA, 8V
Current - Collector (Ic) (Max)	65mA
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Supplier Device Package	SOT-23-3
Base Part Number	BFR183

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BFP620H7764XTSA1	Infineon Technologies, RF Transistor NPN 2.8V 80mA 65GHz 185mW Surface Mount PG-SOT343-4,	View
BFU790F,115	NXP USA Inc., RF Transistor NPN 2.8V 100mA 25GHz 234mW Surface Mount 4-DFP,	View
BFP183WH6327XTSA1	Infineon Technologies, RF Transistor NPN 12V 65mA 8.5GHz 450mW Surface Mount PG-SOT343-4,	View
BFR181E6327HTSA1	Infineon Technologies, RF Transistor NPN 12V 20mA 8GHz 175mW Surface Mount SOT-23-3,	View
BFU530WX	NXP USA Inc., RF Transistor NPN 12V 40mA 11GHz 450mW Surface Mount SOT-323-3, Automotive, AEC-Q101	View
2SC5095-R(TE85L,F)	Toshiba Semiconductor and Storage, RF Transistor NPN 10V 15mA 10GHz 100mW Surface Mount SC-70,	View
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BFQ18A,115	NXP USA Inc., RF Transistor NPN 18V 150mA 4GHz 1W Surface Mount SOT-89-3,	View

BFR183E6327HTSA1

Part NumberBFR183E6327HTSA1