Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Datasheet	BFP196
Standard Package	1
Manufacturer	Infineon Technologies
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	12V
Frequency - Transition	7.5GHz
Noise Figure (dB Typ @ f)	1.3dB ~ 2.3dB @ 900MHz ~ 1.8GHz
Gain	10.5dB ~ 16.5dB
Power - Max	700mW
DC Current Gain (hFE) (Min) @ Ic, Vce	70 @ 50mA, 8V
Current - Collector (Ic) (Max)	150mA
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-253-4, TO-253AA
Supplier Device Package	PG-SOT143-4
Base Part Number	BFP196

2SC5227A-4-TB-E	ON Semiconductor, RF Transistor NPN 10V 70mA 7GHz 200mW Surface Mount 3-CP,	View
BFP640FH6327XTSA1	Infineon Technologies, RF Transistor NPN 4.5V 50mA 40GHz 200mW Surface Mount 4-TSFP,	View
BFP720H6327XTSA1	Infineon Technologies, RF Transistor NPN 4.7V 25mA 45GHz 100mW Surface Mount SOT-343,	View
BFP540H6327XTSA1	Infineon Technologies, RF Transistor NPN 5V 80mA 30GHz 250mW Surface Mount PG-SOT343-4,	View
MMBTH10-TP	Micro Commercial Co, RF Transistor NPN 25V 50mA 650MHz 225mW Surface Mount SOT-23,	View
DSC5G0200L	Panasonic Electronic Components, RF Transistor NPN 20V 15mA 650MHz 150mW Surface Mount SMini3-F2-B,	View
2SC4713KT146S	Rohm Semiconductor, RF Transistor NPN 6V 50mA 800MHz 200mW Surface Mount SMT3,	View
SS9018HBU	ON Semiconductor, RF Transistor NPN 15V 50mA 1.1GHz 400mW Through Hole TO-92-3,	View
BFR193WH6327XTSA1	Infineon Technologies, RF Transistor NPN 12V 80mA 8GHz 580mW Surface Mount PG-SOT323-3,	View
2SC5086-O,LF	Toshiba Semiconductor and Storage, RF Transistor NPN 12V 80mA 7GHz 100mW Surface Mount SSM,	View
15GN03CA-TB-E	ON Semiconductor, RF Transistor NPN 10V 70mA 1.5GHz 200mW Surface Mount 3-CP,	View
MT3S111(TE85L,F)	Toshiba Semiconductor and Storage, RF Transistor NPN 6V 100mA 11.5GHz 700mW Surface Mount S-Mini,	View

BFP196E6327HTSA1

Part NumberBFP196E6327HTSA1