Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Datasheet	MMBTH10RG
Standard Package	1
Manufacturer	ON Semiconductor
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	40V
Frequency - Transition	450MHz
Noise Figure (dB Typ @ f)	-
Gain	-
Power - Max	225mW
DC Current Gain (hFE) (Min) @ Ic, Vce	50 @ 1mA, 6V
Current - Collector (Ic) (Max)	50mA
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Supplier Device Package	SOT-23-3
Base Part Number	MMBTH10

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MMBTH10RG

Part NumberMMBTH10RG