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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IPD25N06S4L-30 Standard Package 1 Manufacturer Infineon Technologies Series Automotive, AEC-Q101, OptiMOS™ Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 25A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 30mOhm @ 25A, 10V Vgs(th) (Max) @ Id 2.2V @ 8µA Gate Charge (Qg) (Max) @ Vgs 16.3nC @ 10V Vgs (Max) ±16V Input Capacitance (Ciss) (Max) @ Vds 1220pF @ 25V FET Feature - Power Dissipation (Max) 29W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-TO252-3-11 Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
FDP33N25 ON Semiconductor, N-Channel 250V 33A (Tc) 235W (Tc) Through Hole TO-220-3, UniFET™
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IRFB42N20DPBF Infineon Technologies, N-Channel 200V 44A (Tc) 2.4W (Ta), 330W (Tc) Through Hole TO-220AB, HEXFET®
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FQA46N15 ON Semiconductor, N-Channel 150V 50A (Tc) 250W (Tc) Through Hole TO-3P, QFET®
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IRLR024PBF Vishay Siliconix, N-Channel 60V 14A (Tc) 42W (Tc) Surface Mount D-Pak,
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STB10NK60ZT4 STMicroelectronics, N-Channel 600V 10A (Tc) 115W (Tc) Surface Mount D2PAK, SuperMESH™
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PSMN3R4-30PL,127 Nexperia USA Inc., N-Channel 30V 100A (Tc) 114W (Tc) Through Hole TO-220AB,
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SIRC10DP-T1-GE3 Vishay Siliconix, N-Channel 30V 60A (Tc) 43W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET® Gen IV
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NVMFS4C03NT1G ON Semiconductor, N-Channel 30V 31.4A (Ta), 143A (Tc) 3.71W (Ta), 77W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL),
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SQM100N10-10_GE3 Vishay Siliconix, N-Channel 100V 100A (Tc) 375W (Tc) Surface Mount TO-263 (D2Pak), Automotive, AEC-Q101, TrenchFET®
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CSD17501Q5A Texas Instruments, N-Channel 30V 100A (Tc) 3.2W (Ta) Surface Mount 8-VSONP (5x6), NexFET™
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BUK768R1-40E,118 Nexperia USA Inc., N-Channel 40V 75A (Tc) 96W (Tc) Surface Mount D2PAK, Automotive, AEC-Q101, TrenchMOS™
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IXTP100N04T2 IXYS, N-Channel 40V 100A (Tc) 150W (Tc) Through Hole TO-220AB, TrenchT2™
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