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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IRLR2905ZPbF, IRLU2905ZPbF
Standard Package 1
Manufacturer Infineon Technologies
Series HEXFET®
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55V
Current - Continuous Drain (Id) @ 25°C 42A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 13.5mOhm @ 36A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 35nC @ 5V
Vgs (Max) ±16V
Input Capacitance (Ciss) (Max) @ Vds 1570pF @ 25V
FET Feature -
Power Dissipation (Max) 110W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D-Pak
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
TSM3N80CH C5G
Taiwan Semiconductor Corporation, N-Channel 800V 3A (Tc) 94W (Tc) Through Hole TO-251 (IPAK),
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NTR4501NST1G
ON Semiconductor, Surface Mount SOT-23-3 (TO-236),
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BUK9M120-100EX
Nexperia USA Inc., N-Channel 100V 11.5A (Tc) 44W (Tc) Surface Mount LFPAK33, Automotive, AEC-Q101, TrenchMOS™
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IRFZ40PBF
Vishay Siliconix, N-Channel 60V 50A (Tc) 150W (Tc) Through Hole TO-220AB,
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IPA60R950C6XKSA1
Infineon Technologies, N-Channel 600V 4.4A (Tc) 26W (Tc) Through Hole PG-TO220-FP, CoolMOS™
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CSD13201W10
Texas Instruments, N-Channel 12V 1.6A (Ta) 1.2W (Ta) Surface Mount 4-DSBGA (1x1), NexFET™
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MMBF170-7-F
Diodes Incorporated, N-Channel 60V 500mA (Ta) 300mW (Ta) Surface Mount SOT-23-3,
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TK22A10N1,S4X
Toshiba Semiconductor and Storage, N-Channel 100V 22A (Tc) 30W (Tc) Through Hole TO-220SIS, U-MOSVIII-H
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IRF6717MTRPBF
Infineon Technologies, N-Channel 25V 38A (Ta), 200A (Tc) 2.8W (Ta), 96W (Tc) Surface Mount DIRECTFET™ MX, HEXFET®
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STD7NM80-1
STMicroelectronics, N-Channel 800V 6.5A (Tc) 90W (Tc) Through Hole I-PAK, MDmesh™
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SPA07N60C3XKSA1
Infineon Technologies, N-Channel 650V 7.3A (Tc) 32W (Tc) Through Hole PG-TO220-FP, CoolMOS™
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SIJ438DP-T1-GE3
Vishay Siliconix, N-Channel 40V 80A (Tc) 69.4W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®
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