BSP149H6327XTSA1
BSP149H6327XTSA1
Part Number BSP149H6327XTSA1
Description MOSFET N-CH 200V 660MA SOT-223
Package / Case TO-261-4, TO-261AA
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Lead Time To be Confirmed
Detailed Description N-Channel 200V 660mA (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4
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BSP149H6327XTSA1 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BSP149
Standard Package 1
Manufacturer Infineon Technologies
Series SIPMOS®
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 660mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 0V, 10V
Rds On (Max) @ Id, Vgs 1.8Ohm @ 660mA, 10V
Vgs(th) (Max) @ Id 1V @ 400µA
Gate Charge (Qg) (Max) @ Vgs 14nC @ 5V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 430pF @ 25V
FET Feature Depletion Mode
Power Dissipation (Max) 1.8W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-SOT223-4
Package / Case TO-261-4, TO-261AA
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