Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ IPD60R2K1CEAUMA1

IPD60R2K1CEAUMA1

IPD60R2K1CEAUMA1

Part NumberIPD60R2K1CEAUMA1

ManufacturerInfineon Technologies

DescriptionMOSFET N-CH 600V 2.3A TO-252-3

DatasheetIPD60R2K1CE, IPU60R2K1CE

Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 600V 2.3A (Tc) 38W (Tc) Surface Mount PG-TO252-3

To learn about the specification of IPD60R2K1CEAUMA1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add IPD60R2K1CEAUMA1 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of IPD60R2K1CEAUMA1.
We are offering IPD60R2K1CEAUMA1 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

IPD60R2K1CEAUMA1 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IPD60R2K1CE, IPU60R2K1CE
Standard Package	2500
Manufacturer	Infineon Technologies
Series	CoolMOS™ CE
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25°C	2.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	2.1Ohm @ 760mA, 10V
Vgs(th) (Max) @ Id	3.5V @ 60µA
Gate Charge (Qg) (Max) @ Vgs	6.7nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	140pF @ 100V
FET Feature	-
Power Dissipation (Max)	38W (Tc)
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TO252-3
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63

IPD60R2K1CEAUMA1 - Related Products

	NX138BKWX	Nexperia USA Inc., N-Channel 60V 210mA (Ta) 266mW (Ta), 1.33W (Tc) Surface Mount SC-70,	View
	IRF630PBF	Vishay Siliconix, N-Channel 200V 9A (Tc) 74W (Tc) Through Hole TO-220AB,	View
	IXFN52N100X	IXYS, N-Channel 1000V 44A (Tc) 830W (Tc) Chassis Mount SOT-227B, HiPerFET™	View
	NTTFS5820NLTAG	ON Semiconductor, N-Channel 60V 11A (Ta), 37A (Tc) 2.7W (Ta), 33W (Tc) Surface Mount 8-WDFN (3.3x3.3),	View
	FDMC86240	ON Semiconductor, N-Channel 150V 4.6A (Ta), 16A (Tc) 2.3W (Ta), 40W (Tc) Surface Mount 8-MLP (3.3x3.3), PowerTrench®	View
	TK31J60W,S1VQ	Toshiba Semiconductor and Storage, N-Channel 600V 30.8A (Ta) 230W (Tc) Through Hole TO-3P(N), DTMOSIV	View
	PSMN0R9-25YLDX	Nexperia USA Inc., N-Channel 25V 300A (Tc) 238W (Tc) Surface Mount LFPAK56, Power-SO8,	View
	TSM088NA03CR RLG	Taiwan Semiconductor Corporation, N-Channel 30V 61A (Tc) 56W (Tc) Surface Mount 8-PDFN (5x6),	View
	IXFP36N20X3	IXYS, N-Channel 200V 36A (Tc) 176W (Tc) Through Hole TO-220, HiPerFET™	View
	TSM60NB1R4CP ROG	Taiwan Semiconductor Corporation, N-Channel 600V 3A (Tc) 28.4W (Tc) Surface Mount TO-252, (D-Pak),	View
	SI2342DS-T1-GE3	Vishay Siliconix, N-Channel 8V 6A (Tc) 2.5W (Tc) Surface Mount SOT-23, TrenchFET®	View
	IXFX44N80P	IXYS, N-Channel 800V 44A (Tc) 1040W (Tc) Through Hole PLUS247™-3, HiPerFET™, PolarHT™	View

IPD60R2K1CEAUMA1 - Tags

IPD60R2K1CEAUMA1 IPD60R2K1CEAUMA1 PDF IPD60R2K1CEAUMA1 datasheet IPD60R2K1CEAUMA1 specification IPD60R2K1CEAUMA1 image IPD60R2K1CEAUMA1 India Renesas Electronics India IPD60R2K1CEAUMA1 buy IPD60R2K1CEAUMA1 IPD60R2K1CEAUMA1 price IPD60R2K1CEAUMA1 distributor IPD60R2K1CEAUMA1 supplier IPD60R2K1CEAUMA1 wholesales