TPN1R603PL,L1Q
TPN1R603PL,L1Q
Part Number TPN1R603PL,L1Q
Description X35 PB-F POWER MOSFET TRANSISTOR
Package / Case 8-PowerVDFN
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description N-Channel 30V 80A (Tc) 104W (Tc) Surface Mount 8-TSON Advance (3.3x3.3)
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TPN1R603PL,L1Q - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet TPN1R603PL
Standard Package 1
Manufacturer Toshiba Semiconductor and Storage
Series U-MOSIX-H
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.6mOhm @ 40A, 10V
Vgs(th) (Max) @ Id 2.1V @ 300µA
Gate Charge (Qg) (Max) @ Vgs 41nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3900pF @ 15V
FET Feature -
Power Dissipation (Max) 104W (Tc)
Operating Temperature 175°C
Mounting Type Surface Mount
Supplier Device Package 8-TSON Advance (3.3x3.3)
Package / Case 8-PowerVDFN
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