Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SQJ858AEP-T1_GE3

SQJ858AEP-T1_GE3

SQJ858AEP-T1_GE3

Part NumberSQJ858AEP-T1_GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 40V 58A

DatasheetSQJ858AEP-T1-GE3

Package / CasePowerPAK® SO-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 40V 58A (Tc) 48W (Tc) Surface Mount PowerPAK® SO-8

To learn about the specification of SQJ858AEP-T1_GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SQJ858AEP-T1_GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SQJ858AEP-T1_GE3.
We are offering SQJ858AEP-T1_GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SQJ858AEP-T1_GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SQJ858AEP-T1-GE3
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	Automotive, AEC-Q101, TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25°C	58A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	6.3mOhm @ 14A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	55nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2450pF @ 20V
FET Feature	-
Power Dissipation (Max)	48W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	PowerPAK® SO-8

SQJ858AEP-T1_GE3 - Related Products

	IPB60R190C6ATMA1	Infineon Technologies, N-Channel 600V 20.2A (Tc) 151W (Tc) Surface Mount D²PAK (TO-263AB), CoolMOS™	View
	2N7002KA-TP	Micro Commercial Co, N-Channel 60V 340mA 350mW Surface Mount SOT-23,	View
	NTD4808N-1G	ON Semiconductor, N-Channel 30V 10A (Ta), 63A (Tc) 1.4W (Ta), 54.6W (Tc) Through Hole I-PAK,	View
	SI7464DP-T1-GE3	Vishay Siliconix, N-Channel 200V 1.8A (Ta) 1.8W (Ta) Surface Mount PowerPAK® SO-8, TrenchFET®	View
	2SK4177-DL-1E	ON Semiconductor, N-Channel 1500V 2A (Ta) 80W (Tc) Surface Mount TO-263-2,	View
	STH270N8F7-6	STMicroelectronics, N-Channel 80V 180A (Tc) 315W (Tc) Surface Mount H²PAK, DeepGATE™, STripFET™ VII	View
	BUK7628-100A,118	Nexperia USA Inc., N-Channel 100V 47A (Tc) 166W (Tc) Surface Mount D2PAK, Automotive, AEC-Q101, TrenchMOS™	View
	STB20N65M5	STMicroelectronics, N-Channel 650V 18A (Tc) 130W (Tc) Surface Mount D2PAK, MDmesh™ V	View
	SIHA6N65E-E3	Vishay Siliconix, N-Channel 650V 7A (Tc) 31W (Tc) Through Hole TO-220 Full Pack,	View
	BUK9230-100B,118	Nexperia USA Inc., N-Channel 100V 47A (Tc) 167W (Tc) Surface Mount DPAK, Automotive, AEC-Q101, TrenchMOS™	View
	FDB8444	ON Semiconductor, N-Channel 40V 70A (Tc) 167W (Tc) Surface Mount TO-263AB, PowerTrench®	View
	IXFH56N30X3	IXYS, N-Channel 300V 56A (Tc) 320W (Tc) Through Hole TO-247, HiPerFET™	View

SQJ858AEP-T1_GE3 - Tags

SQJ858AEP-T1_GE3 SQJ858AEP-T1_GE3 PDF SQJ858AEP-T1_GE3 datasheet SQJ858AEP-T1_GE3 specification SQJ858AEP-T1_GE3 image SQJ858AEP-T1_GE3 India Renesas Electronics India SQJ858AEP-T1_GE3 buy SQJ858AEP-T1_GE3 SQJ858AEP-T1_GE3 price SQJ858AEP-T1_GE3 distributor SQJ858AEP-T1_GE3 supplier SQJ858AEP-T1_GE3 wholesales