Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ IPD122N10N3GATMA1

IPD122N10N3GATMA1

IPD122N10N3GATMA1

Part NumberIPD122N10N3GATMA1

ManufacturerInfineon Technologies

DescriptionMOSFET N-CH 100V 59A

DatasheetIPD122N10N3G

Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 100V 59A (Tc) 94W (Tc) Surface Mount PG-TO252-3

To learn about the specification of IPD122N10N3GATMA1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add IPD122N10N3GATMA1 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of IPD122N10N3GATMA1.
We are offering IPD122N10N3GATMA1 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

IPD122N10N3GATMA1 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IPD122N10N3G
Standard Package	2500
Manufacturer	Infineon Technologies
Series	OptiMOS™
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	59A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	12.2mOhm @ 46A, 10V
Vgs(th) (Max) @ Id	3.5V @ 46µA
Gate Charge (Qg) (Max) @ Vgs	35nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2500pF @ 50V
FET Feature	-
Power Dissipation (Max)	94W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TO252-3
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63

IPD122N10N3GATMA1 - Related Products

	BSB014N04LX3GXUMA1	Infineon Technologies, N-Channel 40V 36A (Ta), 180A (Tc) 2.8W (Ta), 89W (Tc) Surface Mount MG-WDSON-2, CanPAK M™, OptiMOS™	View
	DN3765K4-G	Microchip Technology, N-Channel 650V 300mA (Tj) 2.5W (Ta) Surface Mount TO-252-3,	View
	RHU002N06T106	Rohm Semiconductor, N-Channel 60V 200mA (Ta) 200mW (Ta) Surface Mount UMT3,	View
	STD6N65M2	STMicroelectronics, N-Channel 650V 4A (Tc) 60W (Tc) Surface Mount DPAK, MDmesh™	View
	IXFN80N50	IXYS, N-Channel 500V 66A (Tc) 700W (Tc) Chassis Mount SOT-227B, HiPerFET™	View
	IPA80R310CEXKSA2	Infineon Technologies, N-Channel 800V 16.7A (Tc) 35W (Tc) Through Hole PG-TO220-FP, CoolMOS™	View
	IRLS3034TRLPBF	Infineon Technologies, N-Channel 40V 195A (Tc) 375W (Tc) Surface Mount D2PAK, HEXFET®	View
	SI7112DN-T1-GE3	Vishay Siliconix, N-Channel 30V 11.3A (Tc) 1.5W (Ta) Surface Mount PowerPAK® 1212-8, TrenchFET®	View
	FCD620N60ZF	ON Semiconductor, N-Channel 600V 7.3A (Tc) 89W (Tc) Surface Mount DPAK, HiPerFET™, Polar™	View
	IXTP100N15X4	IXYS, N-Channel 150V 100A (Tc) 375W (Tc) Through Hole TO-220,	View
	FDMC86116LZ	ON Semiconductor, N-Channel 100V 3.3A (Ta), 7.5A (Tc) 2.3W (Ta), 19W (Tc) Surface Mount 8-MLP (3.3x3.3), PowerTrench®	View
	IPB70N04S406ATMA1	Infineon Technologies, N-Channel 40V 70A (Tc) 58W (Tc) Surface Mount PG-TO263-3-2, OptiMOS™	View

IPD122N10N3GATMA1 - Tags

IPD122N10N3GATMA1 IPD122N10N3GATMA1 PDF IPD122N10N3GATMA1 datasheet IPD122N10N3GATMA1 specification IPD122N10N3GATMA1 image IPD122N10N3GATMA1 India Renesas Electronics India IPD122N10N3GATMA1 buy IPD122N10N3GATMA1 IPD122N10N3GATMA1 price IPD122N10N3GATMA1 distributor IPD122N10N3GATMA1 supplier IPD122N10N3GATMA1 wholesales