TP2510N8-G
TP2510N8-G
Part Number TP2510N8-G Description MOSFET P-CH 100V 0.48A SOT89-3 Package / Case TO-243AAUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description P-Channel 100V 480mA (Tj) 1.6W (Ta) Surface Mount TO-243AA (SOT-89)
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TP2510N8-G - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet TP2510 Standard Package 2000 Manufacturer Microchip Technology Series - Packaging Tape & Reel (TR) Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 480mA (Tj) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 3.5Ohm @ 750mA, 10V Vgs(th) (Max) @ Id 2.4V @ 1mA Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 125pF @ 25V FET Feature - Power Dissipation (Max) 1.6W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-243AA (SOT-89) Package / Case TO-243AA
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