CSD25310Q2T
CSD25310Q2T
Part Number CSD25310Q2T Description 20-V P-CHANNEL NEXFET POWER MOSF Package / Case 6-WDFN Exposed PadUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description P-Channel 20V 20A (Ta) 2.9W (Ta) Surface Mount 6-WSON (2x2)
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CSD25310Q2T - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet CSD25310Q2 Standard Package 1 Manufacturer Texas Instruments Series NexFET™ Packaging Cut Tape (CT) Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 20A (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V Rds On (Max) @ Id, Vgs 23.9mOhm @ 5A, 4.5V Vgs(th) (Max) @ Id 1.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 4.7nC @ 4.5V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 655pF @ 10V FET Feature - Power Dissipation (Max) 2.9W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 6-WSON (2x2) Package / Case 6-WDFN Exposed Pad
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