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CSD25310Q2T

CSD25310Q2T

Part NumberCSD25310Q2T

ManufacturerTexas Instruments

Description20-V P-CHANNEL NEXFET POWER MOSF

DatasheetCSD25310Q2

Package / Case6-WDFN Exposed Pad

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 20V 20A (Ta) 2.9W (Ta) Surface Mount 6-WSON (2x2)

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CSD25310Q2T - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	CSD25310Q2
Standard Package	1
Manufacturer	Texas Instruments
Series	NexFET™
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	20A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Rds On (Max) @ Id, Vgs	23.9mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id	1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	4.7nC @ 4.5V
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	655pF @ 10V
FET Feature	-
Power Dissipation (Max)	2.9W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	6-WSON (2x2)
Package / Case	6-WDFN Exposed Pad

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