SI4483ADY-T1-GE3
SI4483ADY-T1-GE3
Part Number SI4483ADY-T1-GE3 Description MOSFET P-CH 30V 19.2A 8-SOIC Package / Case 8-SOIC (0.154", 3.90mm Width)Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description P-Channel 30V 19.2A (Tc) 2.9W (Ta), 5.9W (Tc) Surface Mount 8-SO
To learn about the specification of SI4483ADY-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI4483ADY-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI4483ADY-T1-GE3.
We are offering SI4483ADY-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SI4483ADY-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SI4483ADY Standard Package 2500 Manufacturer Vishay Siliconix Series TrenchFET® Packaging Tape & Reel (TR) Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 19.2A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 8.8mOhm @ 10A, 10V Vgs(th) (Max) @ Id 2.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs 135nC @ 10V Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 3900pF @ 15V FET Feature - Power Dissipation (Max) 2.9W (Ta), 5.9W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-SO Package / Case 8-SOIC (0.154", 3.90mm Width)
SI4483ADY-T1-GE3 - Related ProductsMore >>
FDMC2523P ON Semiconductor, P-Channel 150V 3A (Tc) 42W (Tc) Surface Mount 8-MLP (3.3x3.3), QFET®
View
SSM3J35CT,L3F Toshiba Semiconductor and Storage, P-Channel 20V 100mA (Ta) 100mW (Ta) Surface Mount CST3, π-MOSVI
View
RZF013P01TL Rohm Semiconductor, P-Channel 12V 1.3A (Ta) 800mW (Ta) Surface Mount TUMT3,
View
IRFU9310PBF Vishay Siliconix, P-Channel 400V 1.8A (Tc) 50W (Tc) Through Hole TO-251AA,
View
STD52P3LLH6 STMicroelectronics, P-Channel 30V 52A (Tc) 70W (Tc) Surface Mount DPAK, STripFET™ H6
View
SUM110P06-07L-E3 Vishay Siliconix, P-Channel 60V 110A (Tc) 3.75W (Ta), 375W (Tc) Surface Mount TO-263 (D2Pak), TrenchFET®
View
ZVP2106A Diodes Incorporated, P-Channel 60V 280mA (Ta) 700mW (Ta) Through Hole TO-92-3,
View
DMP3085LSS-13 Diodes Incorporated, P-Channel 30V 3.8A (Ta) 1.3W (Ta) Surface Mount 8-SO,
View
STL42P6LLF6 STMicroelectronics, P-Channel 60V 42A (Tc) 100W (Tc) Surface Mount PowerFlat™ (5x6), STripFET™ F6
View
IRF7425TRPBF Infineon Technologies, P-Channel 20V 15A (Ta) 2.5W (Ta) Surface Mount 8-SO, HEXFET®
View
DMP1011UCB9-7 Diodes Incorporated, P-Channel 8V 10A (Ta) 890mW (Ta) Surface Mount U-WLB1515-9,
View
SQD50P03-07_GE3 Vishay Siliconix, P-Channel 30V 50A (Tc) 136W (Tc) Surface Mount TO-252AA,
View
SI4483ADY-T1-GE3 - Tags
English
