Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	BSS192
Standard Package	1
Manufacturer	Nexperia USA Inc.
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	240V
Current - Continuous Drain (Id) @ 25°C	200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	12Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id	2.8V @ 1mA
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	90pF @ 25V
FET Feature	-
Power Dissipation (Max)	560mW (Ta), 12.5W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-89
Package / Case	TO-243AA

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BSS192,115

Part NumberBSS192,115