Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	TK22E10N1
Standard Package	50
Manufacturer	Toshiba Semiconductor and Storage
Series	U-MOSVIII-H
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	52A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	13.8mOhm @ 11A, 10V
Vgs(th) (Max) @ Id	4V @ 300µA
Gate Charge (Qg) (Max) @ Vgs	28nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1800pF @ 50V
FET Feature	-
Power Dissipation (Max)	72W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220
Package / Case	TO-220-3

STD16N65M2	STMicroelectronics, N-Channel 650V 11A (Tc) 110W (Tc) Surface Mount DPAK, MDmesh™ M2	View
SI4850EY-T1-GE3	Vishay Siliconix, N-Channel 60V 6A (Ta) 1.7W (Ta) Surface Mount 8-SO, TrenchFET®	View
IRF840PBF	Vishay Siliconix, N-Channel 500V 8A (Tc) 125W (Tc) Through Hole TO-220AB,	View
FDS8638	ON Semiconductor, N-Channel 40V 18A (Ta) 2.5W (Ta) Surface Mount 8-SOIC, PowerTrench®	View
IPD180N10N3GATMA1	Infineon Technologies, N-Channel 100V 43A (Tc) 71W (Tc) Surface Mount PG-TO252-3, OptiMOS™	View
AO4430	Alpha & Omega Semiconductor Inc., N-Channel 30V 18A (Ta) 3W (Ta) Surface Mount 8-SOIC,	View
STD4N90K5	STMicroelectronics, N-Channel 900V 3A (Tc) 60W (Tc) Surface Mount DPAK, MDmesh™	View
PSMN063-150D,118	Nexperia USA Inc., N-Channel 150V 29A (Tc) 150W (Tc) Surface Mount DPAK, TrenchMOS™	View
FDV301N	ON Semiconductor, N-Channel 25V 220mA (Ta) 350mW (Ta) Surface Mount SOT-23,	View
STD13N60M2	STMicroelectronics, N-Channel 600V 11A (Tc) 110W (Tc) Surface Mount DPAK, MDmesh™ II Plus	View
TK560A60Y,S4X	Toshiba Semiconductor and Storage, N-Channel 600V 7A (Tc) 30W Through Hole TO-220SIS, DTMOSV	View
STP6N95K5	STMicroelectronics, N-Channel 950V 9A (Tc) 90W (Tc) Through Hole TO-220-3, SuperMESH5™	View

TK22E10N1,S1X

Part NumberTK22E10N1,S1X