SIHB22N60ET1-GE3
SIHB22N60ET1-GE3
Part Number SIHB22N60ET1-GE3
Description MOSFET N-CH 600V 21A TO263
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Lead Time To be Confirmed
Detailed Description N-Channel 600V 21A (Tc) 227W (Tc) Surface Mount TO-263 (D²Pak)
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SIHB22N60ET1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SiHB22N60E
Standard Package 1
Manufacturer Vishay Siliconix
Series E
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 21A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 180mOhm @ 11A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 86nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1920pF @ 100V
FET Feature -
Power Dissipation (Max) 227W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-263 (D²Pak)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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