SIDR402DP-T1-GE3
SIDR402DP-T1-GE3
Part Number SIDR402DP-T1-GE3 Description MOSFET N-CHAN 40V PPSO-8DC Package / Case PowerPAK® SO-8Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 40V 64.6A (Ta), 100A (Tc) 6.25W (Ta), 125W (Tc) Surface Mount PowerPAK® SO-8DC
To learn about the specification of SIDR402DP-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIDR402DP-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIDR402DP-T1-GE3.
We are offering SIDR402DP-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SIDR402DP-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SIDR402DP Standard Package 3000 Manufacturer Vishay Siliconix Series TrenchFET® Gen IV Packaging Tape & Reel (TR) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 64.6A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 0.88mOhm @ 20A, 10V Vgs(th) (Max) @ Id 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 165nC @ 10V Vgs (Max) +20V, -16V Input Capacitance (Ciss) (Max) @ Vds 9100pF @ 20V FET Feature - Power Dissipation (Max) 6.25W (Ta), 125W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® SO-8DC Package / Case PowerPAK® SO-8
SIDR402DP-T1-GE3 - Related ProductsMore >>
RSJ400N10TL Rohm Semiconductor, N-Channel 100V 40A (Tc) 1.35W (Ta), 50W (Tc) Surface Mount LPTS (SC-83),
View
PH2925U,115 Nexperia USA Inc., N-Channel 25V 100A (Tc) 62.5W (Tc) Surface Mount LFPAK56, Power-SO8, TrenchMOS™
View
IPT60R150G7XTMA1 Infineon Technologies, N-Channel 650V 17A (Tc) 106W (Tc) Surface Mount PG-HSOF-8-2, CoolMOS™ G7
View
SI3456DDV-T1-GE3 Vishay Siliconix, N-Channel 30V 6.3A (Tc) 1.7W (Ta), 2.7W (Tc) Surface Mount 6-TSOP, TrenchFET®
View
SIHB35N60E-GE3 Vishay Siliconix, N-Channel 650V 32A (Tc) 250W (Tc) Surface Mount D²PAK (TO-263),
View
IPB80N03S4L03ATMA1 Infineon Technologies, N-Channel 30V 80A (Tc) 94W (Tc) Surface Mount PG-TO263-3-2, OptiMOS™
View
CSD18541F5T Texas Instruments, N-Channel 60V 2.2A (Ta) 500mW (Ta) Surface Mount 3-PICOSTAR, FemtoFET™
View
SQM200N04-1M7L_GE3 Vishay Siliconix, N-Channel 40V 200A (Tc) 375W (Tc) Surface Mount TO-263-7, TrenchFET®
View
SIR172ADP-T1-GE3 Vishay Siliconix, N-Channel 30V 24A (Tc) 29.8W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®
View
BS870-7-F Diodes Incorporated, N-Channel 60V 250mA (Ta) 300mW (Ta) Surface Mount SOT-23-3,
View
SI1330EDL-T1-E3 Vishay Siliconix, N-Channel 60V 240mA (Ta) 280mW (Ta) Surface Mount SC-70-3, TrenchFET®
View
FQPF85N06 ON Semiconductor, N-Channel 60V 53A (Tc) 62W (Tc) Through Hole TO-220F, QFET®
View
SIDR402DP-T1-GE3 - Tags
English
