MVSF2N02ELT1G
MVSF2N02ELT1G
Part Number MVSF2N02ELT1G Description MOSFET N-CH 20V 2.8A SOT23 Package / Case TO-236-3, SC-59, SOT-23-3Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 20V 2.8A (Ta) 1.25W (Ta) Surface Mount SOT-23-3 (TO-236)
To learn about the specification of MVSF2N02ELT1G, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add MVSF2N02ELT1G with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of MVSF2N02ELT1G.
We are offering MVSF2N02ELT1G for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
MVSF2N02ELT1G - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet MGSF2N02EL, MVSF2N02EL Standard Package 3000 Manufacturer ON Semiconductor Series - Packaging Tape & Reel (TR) Part Status Not For New Designs FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 2.8A (Ta) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V Rds On (Max) @ Id, Vgs 85mOhm @ 3.6A, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 3.5nC @ 4V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 150pF @ 5V FET Feature - Power Dissipation (Max) 1.25W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-23-3 (TO-236) Package / Case TO-236-3, SC-59, SOT-23-3
MVSF2N02ELT1G - Related ProductsMore >>
IPP030N10N5AKSA1 Infineon Technologies, N-Channel 100V 120A (Tc) 250W (Tc) Through Hole PG-TO220-3, OptiMOS™
View
CSD13202Q2 Texas Instruments, N-Channel 12V 22A (Ta) 2.7W (Ta) Surface Mount 6-WSON (2x2), NexFET™
View
BSC13DN30NSFDATMA1 Infineon Technologies, N-Channel 300V 16A (Tc) 150W (Tc) Surface Mount PG-TDSON-8-1, OptiMOS™
View
IRFZ44ZLPBF Infineon Technologies, N-Channel 55V 51A (Tc) 80W (Tc) Through Hole TO-262, HEXFET®
View
IRLIZ44GPBF Vishay Siliconix, N-Channel 60V 30A (Tc) 48W (Tc) Through Hole TO-220-3,
View
TK40E06N1,S1X Toshiba Semiconductor and Storage, N-Channel 60V 40A (Ta) 67W (Tc) Through Hole TO-220, U-MOSVIII-H
View
IXTT3N200P3HV IXYS, N-Channel 2000V 3A (Tc) 520W (Tc) Surface Mount TO-268,
View
IRLMS2002TRPBF Infineon Technologies, N-Channel 20V 6.5A (Ta) 2W (Ta) Surface Mount Micro6™(SOT23-6), HEXFET®
View
BUK9Y27-40B,115 Nexperia USA Inc., N-Channel 40V 34A (Tc) 59.4W (Tc) Surface Mount LFPAK56, Power-SO8, Automotive, AEC-Q101, TrenchMOS™
View
AUIRF3205Z Infineon Technologies, N-Channel 55V 75A (Tc) 170W (Tc) Through Hole TO-220AB, HEXFET®
View
IRL100HS121 Infineon Technologies, N-Channel 100V 11A (Tc) 11.5W (Tc) Surface Mount 6-PQFN (2x2),
View
STP33N60M2 STMicroelectronics, N-Channel 600V 26A (Tc) 190W (Tc) Through Hole TO-220, MDmesh™ II Plus
View
MVSF2N02ELT1G - Tags
English
