STW56N65DM2
STW56N65DM2
Part Number STW56N65DM2
Description MOSFET N-CH 650V 48A
Package / Case TO-247-3
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Lead Time To be Confirmed
Detailed Description N-Channel 650V 48A (Tc) 360W (Tc) Through Hole TO-247
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STW56N65DM2 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet STW56N65DM2
Standard Package 30
Manufacturer STMicroelectronics
Series MDmesh™ DM2
Packaging Tube
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 48A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 65mOhm @ 24A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 88nC @ 10V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 4100pF @ 100V
FET Feature -
Power Dissipation (Max) 360W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247
Package / Case TO-247-3
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