SIR618DP-T1-GE3


SIR618DP-T1-GE3

Part NumberSIR618DP-T1-GE3

Manufacturer

Description

Datasheet

Package / CasePowerPAK® SO-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

SIR618DP-T1-GE3 - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet
Standard Package3000
ManufacturerVishay Siliconix
SeriesThunderFET®
PackagingTape & Reel (TR)
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C14.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)7.5V, 10V
Rds On (Max) @ Id, Vgs95mOhm @ 8A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs16nC @ 7.5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds740pF @ 100V
FET Feature-
Power Dissipation (Max)48W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® SO-8
Package / CasePowerPAK® SO-8

SIR618DP-T1-GE3 - Related Products

More >>
NTP6412ANG ON Semiconductor, N-Channel 100V 58A (Tc) 167W (Tc) Through Hole TO-220AB, View
FDC86244 ON Semiconductor, N-Channel 150V 2.3A (Ta) 1.6W (Ta) Surface Mount SuperSOT™-6, PowerTrench® View
CSD19534Q5AT Texas Instruments, N-Channel 100V 50A (Ta) 3.2W (Ta), 63W (Tc) Surface Mount 8-VSONP (5x6), NexFET™ View
BSC0902NSIATMA1 Infineon Technologies, N-Channel 30V 23A (Ta), 100A (Tc) 2.5W (Ta), 48W (Tc) Surface Mount PG-TDSON-8-6, OptiMOS™ View
IXFR80N50P IXYS, N-Channel 500V 45A (Tc) 360W (Tc) Through Hole ISOPLUS247™, HiPerFET™, PolarHT™ View
IRFP7537PBF Infineon Technologies, N-Channel 60V 172A (Tc) 230W (Tc) Through Hole TO-247, HEXFET®, StrongIRFET™ View
DMN3065LW-13 Diodes Incorporated, N-Channel 30V 4A (Ta) 770mW (Ta) Surface Mount SOT-323, View
IXFX300N20X3 IXYS, N-Channel 200V 300A (Tc) 1250W (Tc) Through Hole PLUS247™-3, HiPerFET™ View
SSM3K123TU,LF Toshiba Semiconductor and Storage, N-Channel 20V 4.2A (Ta) 500mW (Ta) Surface Mount UFM, U-MOSIII View
IRL520NPBF Infineon Technologies, N-Channel 100V 10A (Tc) 48W (Tc) Through Hole TO-220AB, HEXFET® View
SQJ414EP-T1_GE3 Vishay Siliconix, N-Channel 30V 30A (Tc) 45W (Tc) Surface Mount PowerPAK® SO-8, Automotive, AEC-Q101, TrenchFET® View
TPN5900CNH,L1Q Toshiba Semiconductor and Storage, N-Channel 150V 9A (Ta) 700mW (Ta), 39W (Tc) Surface Mount 8-TSON Advance (3.3x3.3), U-MOSVIII-H View

SIR618DP-T1-GE3 - Tags

SIR618DP-T1-GE3 SIR618DP-T1-GE3 PDF SIR618DP-T1-GE3 datasheet SIR618DP-T1-GE3 specification SIR618DP-T1-GE3 image SIR618DP-T1-GE3 India Renesas Electronics India SIR618DP-T1-GE3 buy SIR618DP-T1-GE3 SIR618DP-T1-GE3 price SIR618DP-T1-GE3 distributor SIR618DP-T1-GE3 supplier SIR618DP-T1-GE3 wholesales