Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ STU9HN65M2

STU9HN65M2

STU9HN65M2

Part NumberSTU9HN65M2

ManufacturerSTMicroelectronics

DescriptionMOSFET N-CH 650V 5.5A IPAK

DatasheetSTU9HN65M2

Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 650V 5.5A (Tc) 60W (Tc) Through Hole I-PAK

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STU9HN65M2 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	STU9HN65M2
Standard Package	75
Manufacturer	STMicroelectronics
Series	MDmesh™ M2
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650V
Current - Continuous Drain (Id) @ 25°C	5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	820mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	11.5nC @ 10V
Vgs (Max)	±25V
Input Capacitance (Ciss) (Max) @ Vds	325pF @ 100V
FET Feature	-
Power Dissipation (Max)	60W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	I-PAK
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA

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STU9HN65M2 - Tags

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