STB6N65M2
STB6N65M2
Part Number STB6N65M2
Description MOSFET N-CH 650V 4A D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Lead Time To be Confirmed
Detailed Description N-Channel 650V 4A (Tc) 60W (Tc) Surface Mount D2PAK
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STB6N65M2 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet STB6N65M2, STD6N65M2
Standard Package 1
Manufacturer STMicroelectronics
Series MDmesh™
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.35Ohm @ 2A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 9.8nC @ 10V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 226pF @ 100V
FET Feature -
Power Dissipation (Max) 60W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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