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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet STB45N40DM2AG
Standard Package 1
Manufacturer STMicroelectronics
Series Automotive, AEC-Q101, MDmesh™ DM2
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 400V
Current - Continuous Drain (Id) @ 25°C 38A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 72mOhm @ 19A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 56nC @ 10V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 2600pF @ 100V
FET Feature -
Power Dissipation (Max) 250W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRF820APBF
Vishay Siliconix, N-Channel 500V 2.5A (Tc) 50W (Tc) Through Hole TO-220AB,
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MCH6421-TL-E
ON Semiconductor, N-Channel 20V 5.5A (Ta) 1.5W (Ta) Surface Mount 6-MCPH,
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SI4630DY-T1-E3
Vishay Siliconix, N-Channel 25V 40A (Tc) 3.5W (Ta), 7.8W (Tc) Surface Mount 8-SO, TrenchFET®
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STL10N60M2
STMicroelectronics, N-Channel 600V 5.5A (Tc) 48W (Tc) Surface Mount PowerFlat™ (5x6) HV, MDmesh™ II Plus
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SI7850DP-T1-GE3
Vishay Siliconix, N-Channel 60V 6.2A (Ta) 1.8W (Ta) Surface Mount PowerPAK® SO-8, TrenchFET®
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FQU9N25TU
ON Semiconductor, N-Channel 250V 7.4A (Tc) 2.5W (Ta), 55W (Tc) Through Hole I-PAK, QFET®
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TSM80N950CH C5G
Taiwan Semiconductor Corporation, N-Channel 800V 6A (Tc) 110W (Tc) Through Hole TO-251 (IPAK),
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PMV37EN2R
Nexperia USA Inc., N-Channel 30V 4.5A (Ta) 510mW (Ta), 5W (Tc) Surface Mount TO-236AB,
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STL7N60M2
STMicroelectronics, N-Channel 600V 5A (Tc) 4W (Ta), 67W (Tc) Surface Mount PowerFLAT™ (5x5), MDmesh™
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IRF6646TRPBF
Infineon Technologies, N-Channel 80V 12A (Ta), 68A (Tc) 2.8W (Ta), 89W (Tc) Surface Mount DIRECTFET™ MN, HEXFET®
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DMN3051L-7
Diodes Incorporated, N-Channel 30V 5.8A (Ta) 700mW (Ta) Surface Mount SOT-23-3,
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IRFS11N50ATRLP
Vishay Siliconix, N-Channel 500V 11A (Tc) 170W (Tc) Surface Mount TO-263AB,
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