Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ IPD80R2K0P7ATMA1

IPD80R2K0P7ATMA1

IPD80R2K0P7ATMA1

Part NumberIPD80R2K0P7ATMA1

ManufacturerInfineon Technologies

DescriptionMOSFET N-CH 800V 3A TO252-3

DatasheetIPD80R2K0P7

Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 800V 3A (Tc) 24W (Tc) Surface Mount PG-TO252-3

To learn about the specification of IPD80R2K0P7ATMA1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add IPD80R2K0P7ATMA1 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of IPD80R2K0P7ATMA1.
We are offering IPD80R2K0P7ATMA1 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

IPD80R2K0P7ATMA1 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IPD80R2K0P7
Standard Package	1
Manufacturer	Infineon Technologies
Series	CoolMOS™ P7
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	800V
Current - Continuous Drain (Id) @ 25°C	3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	2Ohm @ 940mA, 10V
Vgs(th) (Max) @ Id	3.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs	9nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	175pF @ 500V
FET Feature	-
Power Dissipation (Max)	24W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TO252-3
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63

IPD80R2K0P7ATMA1 - Related Products

	HUF75345P3	ON Semiconductor, N-Channel 55V 75A (Tc) 325W (Tc) Through Hole TO-220-3, UltraFET™	View
	SQ2318AES-T1_GE3	Vishay Siliconix, N-Channel 40V 8A (Tc) 3W (Tc) Surface Mount SOT-23-3 (TO-236), Automotive, AEC-Q101, TrenchFET®	View
	SIHF30N60E-GE3	Vishay Siliconix, N-Channel 600V 29A (Tc) 37W (Tc) Through Hole,	View
	FQD13N10LTM	ON Semiconductor, N-Channel 100V 10A (Tc) 2.5W (Ta), 40W (Tc) Surface Mount D-Pak, QFET®	View
	STI57N65M5	STMicroelectronics, N-Channel 650V 42A (Tc) 250W (Tc) Through Hole I2PAK (TO-262), MDmesh™ V	View
	PSMN1R0-25YLDX	Nexperia USA Inc., N-Channel 25V 100A (Tc) 160W (Tc) Surface Mount LFPAK56, Power-SO8,	View
	IRF8707TRPBF	Infineon Technologies, N-Channel 30V 11A (Ta) 2.5W (Ta) Surface Mount 8-SO, HEXFET®	View
	AO4468	Alpha & Omega Semiconductor Inc., N-Channel 30V 10.5A (Ta) 3.1W (Ta) Surface Mount 8-SOIC,	View
	DMN95H8D5HCTI	Diodes Incorporated, N-Channel 950V 30W (Tc) Through Hole ITO-220AB,	View
	BSL606SNH6327XTSA1	Infineon Technologies, N-Channel 60V 4.5A (Ta) 2W (Ta) Surface Mount PG-TSOP-6-6, Automotive, AEC-Q101, OptiMOS™	View
	STW6N95K5	STMicroelectronics, N-Channel 950V 9A (Tc) 90W (Tc) Through Hole TO-247-3, SuperMESH5™	View
	PSMN1R5-30BLEJ	Nexperia USA Inc., N-Channel 30V 120A (Tc) 401W (Tc) Surface Mount D2PAK,	View

IPD80R2K0P7ATMA1 - Tags

IPD80R2K0P7ATMA1 IPD80R2K0P7ATMA1 PDF IPD80R2K0P7ATMA1 datasheet IPD80R2K0P7ATMA1 specification IPD80R2K0P7ATMA1 image IPD80R2K0P7ATMA1 India Renesas Electronics India IPD80R2K0P7ATMA1 buy IPD80R2K0P7ATMA1 IPD80R2K0P7ATMA1 price IPD80R2K0P7ATMA1 distributor IPD80R2K0P7ATMA1 supplier IPD80R2K0P7ATMA1 wholesales