BSZ060NE2LSATMA1
BSZ060NE2LSATMA1
Part Number BSZ060NE2LSATMA1 Description MOSFET N-CH 25V 12A TSDSON-8 Package / Case 8-PowerTDFNUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 25V 12A (Ta), 40A (Tc) 2.1W (Ta), 26W (Tc) Surface Mount PG-TSDSON-8-FL
To learn about the specification of BSZ060NE2LSATMA1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add BSZ060NE2LSATMA1 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of BSZ060NE2LSATMA1.
We are offering BSZ060NE2LSATMA1 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
BSZ060NE2LSATMA1 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BSZ060NE2LS Standard Package 1 Manufacturer Infineon Technologies Series OptiMOS™ Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 25V Current - Continuous Drain (Id) @ 25°C 12A (Ta), 40A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 6mOhm @ 20A, 10V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 9.1nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 670pF @ 12V FET Feature - Power Dissipation (Max) 2.1W (Ta), 26W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-TSDSON-8-FL Package / Case 8-PowerTDFN
BSZ060NE2LSATMA1 - Related ProductsMore >>
DMTH4004SCTB-13 Diodes Incorporated, N-Channel 40V 100A (Tc) 4.7W (Ta), 136W (Tc) Surface Mount TO-263AB,
View
FQP45N15V2 ON Semiconductor, N-Channel 150V 45A (Tc) 220W (Tc) Through Hole TO-220-3, QFET®
View
IPD70R950CEAUMA1 Infineon Technologies, N-Channel 700V 7.4A (Tc) 68W (Tc) Surface Mount PG-TO252-3, CoolMOS™
View
STL7LN80K5 STMicroelectronics, N-Channel 800V 5A (Tc) 42W (Tc) Surface Mount PowerFlat™ (5x6), MDmesh™
View
IRFP4110PBF Infineon Technologies, N-Channel 100V 120A (Tc) 370W (Tc) Through Hole TO-247AC, HEXFET®
View
DMN3900UFA-7B Diodes Incorporated, N-Channel 30V 550mA (Ta) 390mW (Ta) Surface Mount X2-DFN0806-3,
View
TK65G10N1,RQ Toshiba Semiconductor and Storage, N-Channel 100V 65A (Ta) 156W (Tc) Surface Mount D2PAK, U-MOSVIII-H
View
STH315N10F7-2 STMicroelectronics, N-Channel 100V 180A (Tc) 315W (Tc) Surface Mount H2Pak-2, DeepGATE™, STripFET™ VII
View
IPP77N06S212AKSA2 Infineon Technologies, N-Channel 55V 77A (Tc) 158W (Tc) Through Hole PG-TO220-3-1, OptiMOS™
View
IRFR4620TRLPBF Infineon Technologies, N-Channel 200V 24A (Tc) 144W (Tc) Surface Mount D-Pak, HEXFET®
View
IXTY08N50D2 IXYS, N-Channel 500V 800mA (Tc) 60W (Tc) Surface Mount TO-252, (D-Pak),
View
SI2318DS-T1-E3 Vishay Siliconix, N-Channel 40V 3A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236), TrenchFET®
View
BSZ060NE2LSATMA1 - Tags
English
