Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI7892BDP-T1-GE3

SI7892BDP-T1-GE3

SI7892BDP-T1-GE3

Part NumberSI7892BDP-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 30V 15A PPAK SO-8

DatasheetSi7892BDP

Package / CasePowerPAK® SO-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 30V 15A (Ta) 1.8W (Ta) Surface Mount PowerPAK® SO-8

To learn about the specification of SI7892BDP-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI7892BDP-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI7892BDP-T1-GE3.
We are offering SI7892BDP-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI7892BDP-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	Si7892BDP
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	15A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	4.2mOhm @ 25A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	40nC @ 4.5V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	3775pF @ 15V
FET Feature	-
Power Dissipation (Max)	1.8W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	PowerPAK® SO-8

SI7892BDP-T1-GE3 - Related Products

	IRFS4620TRLPBF	Infineon Technologies, N-Channel 200V 24A (Tc) 144W (Tc) Surface Mount D2PAK, HEXFET®	View
	IXFH76N07-11	IXYS, N-Channel 70V 76A (Tc) 360W (Tc) Through Hole TO-247AD (IXFH), HiPerFET™	View
	IXTA180N10T	IXYS, N-Channel 100V 180A (Tc) 480W (Tc) Surface Mount TO-263 (IXTA), TrenchMV™	View
	IXFH16N120P	IXYS, N-Channel 1200V 16A (Tc) 660W (Tc) Through Hole TO-247AD (IXFH), HiPerFET™, PolarP2™	View
	SI2366DS-T1-GE3	Vishay Siliconix, N-Channel 30V 5.8A (Tc) 1.25W (Ta), 2.1W (Tc) Surface Mount, TrenchFET®	View
	BUK661R9-40C,118	Nexperia USA Inc., N-Channel 40V 120A (Tc) 306W (Tc) Surface Mount D2PAK, Automotive, AEC-Q101, TrenchMOS™	View
	FQL40N50	ON Semiconductor, N-Channel 500V 40A (Tc) 460W (Tc) Through Hole TO-264-3, QFET®	View
	CSD17553Q5A	Texas Instruments, N-Channel 30V 23.5A (Ta), 100A (Tc) 3.1W (Ta) Surface Mount 8-VSONP (5x6), NexFET™	View
	IXTB62N50L	IXYS, N-Channel 500V 62A (Tc) 800W (Tc) Through Hole PLUS264™,	View
	FQP30N06L	ON Semiconductor, N-Channel 60V 32A (Tc) 79W (Tc) Through Hole TO-220-3, QFET®	View
	R6015ENX	Rohm Semiconductor, N-Channel 600V 15A (Tc) 40W (Tc) Through Hole TO-220FM,	View
	IPA50R280CEXKSA2	Infineon Technologies, N-Channel 500V 7.5A (Tc) 30.4W (Tc) Through Hole TO-220 Full Pack, CoolMOS™ CE	View

SI7892BDP-T1-GE3 - Tags

SI7892BDP-T1-GE3 SI7892BDP-T1-GE3 PDF SI7892BDP-T1-GE3 datasheet SI7892BDP-T1-GE3 specification SI7892BDP-T1-GE3 image SI7892BDP-T1-GE3 India Renesas Electronics India SI7892BDP-T1-GE3 buy SI7892BDP-T1-GE3 SI7892BDP-T1-GE3 price SI7892BDP-T1-GE3 distributor SI7892BDP-T1-GE3 supplier SI7892BDP-T1-GE3 wholesales