SSM6J213FE(TE85L,F
SSM6J213FE(TE85L,F
Part Number SSM6J213FE(TE85L,F
Description MOSFET P CH 20V 2.6A ES6
Package / Case SOT-563, SOT-666
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description P-Channel 20V 2.6A (Ta) 500mW (Ta) Surface Mount ES6
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SSM6J213FE(TE85L,F - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SSM6J213FE
Standard Package 1
Manufacturer Toshiba Semiconductor and Storage
Series U-MOSVI
Packaging Cut Tape (CT)
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 2.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Rds On (Max) @ Id, Vgs 103mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 4.7nC @ 4.5V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 290pF @ 10V
FET Feature -
Power Dissipation (Max) 500mW (Ta)
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package ES6
Package / Case SOT-563, SOT-666
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