Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SSM6J213FE
Standard Package	1
Manufacturer	Toshiba Semiconductor and Storage
Series	U-MOSVI
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	2.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	1.5V, 4.5V
Rds On (Max) @ Id, Vgs	103mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id	1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	4.7nC @ 4.5V
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	290pF @ 10V
FET Feature	-
Power Dissipation (Max)	500mW (Ta)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	ES6
Package / Case	SOT-563, SOT-666

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NVTFS5116PLTWG	ON Semiconductor, P-Channel 60V 6A (Ta) 3.2W (Ta), 21W (Tc) Surface Mount 8-WDFN (3.3x3.3),	View
IRFR9024TRLPBF	Vishay Siliconix, P-Channel 60V 8.8A (Tc) 2.5W (Ta), 42W (Tc) Surface Mount D-Pak,	View
RTL020P02TR	Rohm Semiconductor, P-Channel 20V 2A (Ta) 1W (Ta) Surface Mount TUMT6,	View
SI8497DB-T2-E1	Vishay Siliconix, P-Channel 30V 13A (Tc) 2.77W (Ta), 13W (Tc) Surface Mount 6-microfoot, TrenchFET®	View

SSM6J213FE(TE85L,F

Part NumberSSM6J213FE(TE85L,F