Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI2319CDS-T1-GE3

SI2319CDS-T1-GE3

SI2319CDS-T1-GE3

Part NumberSI2319CDS-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 40V 4.4A SOT-23

DatasheetSI2319CDS

Package / CaseTO-236-3, SC-59, SOT-23-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 40V 4.4A (Tc) 1.25W (Ta), 2.5W (Tc) Surface Mount SOT-23-3 (TO-236)

To learn about the specification of SI2319CDS-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI2319CDS-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI2319CDS-T1-GE3.
We are offering SI2319CDS-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI2319CDS-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI2319CDS
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25°C	4.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	77mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	21nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	595pF @ 20V
FET Feature	-
Power Dissipation (Max)	1.25W (Ta), 2.5W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-3 (TO-236)
Package / Case	TO-236-3, SC-59, SOT-23-3

SI2319CDS-T1-GE3 - Related Products

	SI8487DB-T1-E1	Vishay Siliconix, P-Channel 30V 1.1W (Ta), 2.7W (Tc) Surface Mount 4-Microfoot, TrenchFET®	View
	SQD40P10-40L_GE3	Vishay Siliconix, P-Channel 100V 38A (Tc) 136W (Tc) Surface Mount TO-252AA, Automotive, AEC-Q101, TrenchFET®	View
	SI7421DN-T1-E3	Vishay Siliconix, P-Channel 30V 6.4A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8, TrenchFET®	View
	IXTP26P20P	IXYS, P-Channel 200V 26A (Tc) 300W (Tc) Through Hole TO-220AB, PolarP™	View
	DMG3415U-7	Diodes Incorporated, P-Channel 20V 4A (Ta) 900mW (Ta) Surface Mount SOT-23-3,	View
	STS7PF30L	STMicroelectronics, P-Channel 30V 7A (Tc) 2.5W (Tc) Surface Mount 8-SO, STripFET™ II	View
	ZXMP6A17GQTA	Diodes Incorporated, P-Channel 60V 3A (Ta) 2W (Ta) Surface Mount SOT-223,	View
	DMP2007UFG-7	Diodes Incorporated, P-Channel 20V 18A (Ta), 40A (Tc) 2.3W (Ta) Surface Mount PowerDI3333-8,	View
	SI8499DB-T2-E1	Vishay Siliconix, P-Channel 20V 16A (Tc) 2.77W (Ta), 13W (Tc) Surface Mount 6-Micro Foot™ (1.5x1), TrenchFET®	View
	MIC94052YC6-TR	Microchip Technology, P-Channel 6V 2A (Ta) 270mW (Ta) Surface Mount SC-70-6,	View
	SI8487DB-T1-E1	Vishay Siliconix, P-Channel 30V 1.1W (Ta), 2.7W (Tc) Surface Mount 4-Microfoot, TrenchFET®	View
	AON7407	Alpha & Omega Semiconductor Inc., P-Channel 20V 14.5A (Ta), 40A (Tc) 3.1W (Ta), 29W (Tc) Surface Mount 8-DFN (3x3),	View

SI2319CDS-T1-GE3 - Tags

SI2319CDS-T1-GE3 SI2319CDS-T1-GE3 PDF SI2319CDS-T1-GE3 datasheet SI2319CDS-T1-GE3 specification SI2319CDS-T1-GE3 image SI2319CDS-T1-GE3 India Renesas Electronics India SI2319CDS-T1-GE3 buy SI2319CDS-T1-GE3 SI2319CDS-T1-GE3 price SI2319CDS-T1-GE3 distributor SI2319CDS-T1-GE3 supplier SI2319CDS-T1-GE3 wholesales