FQB8P10TM
FQB8P10TM
Part Number FQB8P10TM
Description MOSFET P-CH 100V 8A D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Lead Time To be Confirmed
Detailed Description P-Channel 100V 8A (Tc) 3.75W (Ta), 65W (Tc) Surface Mount D²PAK (TO-263AB)
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FQB8P10TM - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet FQB8P10
Standard Package 800
Manufacturer ON Semiconductor
Series QFET®
Packaging Tape & Reel (TR)
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 530mOhm @ 4A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 470pF @ 25V
FET Feature -
Power Dissipation (Max) 3.75W (Ta), 65W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D²PAK (TO-263AB)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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