Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SQ2319ADS-T1_GE3

SQ2319ADS-T1_GE3

SQ2319ADS-T1_GE3

Part NumberSQ2319ADS-T1_GE3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 40V 4.6A SOT23-3

DatasheetSQ2319ADS

Package / CaseTO-236-3, SC-59, SOT-23-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 40V 4.6A (Tc) 2.5W (Tc) Surface Mount SOT-23-3 (TO-236)

To learn about the specification of SQ2319ADS-T1_GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SQ2319ADS-T1_GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SQ2319ADS-T1_GE3.
We are offering SQ2319ADS-T1_GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SQ2319ADS-T1_GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SQ2319ADS
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	Automotive, AEC-Q101, TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25°C	4.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	75mOhm @ 3A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	16nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	620pF @ 20V
FET Feature	-
Power Dissipation (Max)	2.5W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-3 (TO-236)
Package / Case	TO-236-3, SC-59, SOT-23-3

SQ2319ADS-T1_GE3 - Related Products

	RSJ250P10FRATL	Rohm Semiconductor, P-Channel 100V 25A (Ta) 50W (Ta) Surface Mount LPTS, Automotive, AEC-Q101	View
	IXTP96P085T	IXYS, P-Channel 85V 96A (Tc) 298W (Tc) Through Hole TO-220AB, TrenchP™	View
	PMFPB8032XP,115	Nexperia USA Inc., P-Channel 20V 2.7A (Ta) 485mW (Ta), 6.25W (Tc) Surface Mount 6-HUSON-EP (2x2),	View
	IRF9520STRLPBF	Vishay Siliconix, P-Channel 100V 6.8A (Tc) 3.7W (Ta), 60W (Tc) Surface Mount D2PAK,	View
	BSS223PWH6327XTSA1	Infineon Technologies, P-Channel 20V 390mA (Ta) 250mW (Ta) Surface Mount PG-SOT323-3, OptiMOS™	View
	IRFP9240PBF	Vishay Siliconix, P-Channel 200V 12A (Tc) 150W (Tc) Through Hole TO-247-3,	View
	FQD2P40TM	ON Semiconductor, P-Channel 400V 1.56A (Tc) 2.5W (Ta), 38W (Tc) Surface Mount D-Pak, QFET®	View
	DMP3036SSS-13	Diodes Incorporated, P-Channel 30V 19.5A (Tc) 1.4W (Ta) Surface Mount 8-SO,	View
	RZF020P01TL	Rohm Semiconductor, P-Channel 12V 2A (Ta) 800mW (Ta) Surface Mount TUMT3,	View
	SQ2319ADS-T1_GE3	Vishay Siliconix, P-Channel 40V 4.6A (Tc) 2.5W (Tc) Surface Mount SOT-23-3 (TO-236), Automotive, AEC-Q101, TrenchFET®	View
	RTR030P02TL	Rohm Semiconductor, P-Channel 20V 3A (Ta) 1W (Ta) Surface Mount TSMT3,	View
	SI4455DY-T1-GE3	Vishay Siliconix, P-Channel 150V 2A (Ta) 5.9W (Tc) Surface Mount 8-SO, TrenchFET®	View

SQ2319ADS-T1_GE3 - Tags

SQ2319ADS-T1_GE3 SQ2319ADS-T1_GE3 PDF SQ2319ADS-T1_GE3 datasheet SQ2319ADS-T1_GE3 specification SQ2319ADS-T1_GE3 image SQ2319ADS-T1_GE3 India Renesas Electronics India SQ2319ADS-T1_GE3 buy SQ2319ADS-T1_GE3 SQ2319ADS-T1_GE3 price SQ2319ADS-T1_GE3 distributor SQ2319ADS-T1_GE3 supplier SQ2319ADS-T1_GE3 wholesales