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FDV302P

FDV302P

Part NumberFDV302P

ManufacturerON Semiconductor

DescriptionMOSFET P-CH 25V 120MA SOT-23

DatasheetFDV302P

Package / CaseTO-236-3, SC-59, SOT-23-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 25V 120mA (Ta) 350mW (Ta) Surface Mount SOT-23

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FDV302P - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	FDV302P
Standard Package	1
Manufacturer	ON Semiconductor
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	25V
Current - Continuous Drain (Id) @ 25°C	120mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)	2.7V, 4.5V
Rds On (Max) @ Id, Vgs	10Ohm @ 200mA, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	0.31nC @ 4.5V
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	11pF @ 10V
FET Feature	-
Power Dissipation (Max)	350mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23
Package / Case	TO-236-3, SC-59, SOT-23-3

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