SI4401DDY-T1-GE3
SI4401DDY-T1-GE3
Part Number SI4401DDY-T1-GE3 Description MOSFET P-CH 40V 16.1A 8-SOIC Package / Case 8-SOIC (0.154", 3.90mm Width)Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description P-Channel 40V 16.1A (Tc) 2.5W (Ta), 6.3W (Tc) Surface Mount 8-SO
To learn about the specification of SI4401DDY-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI4401DDY-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI4401DDY-T1-GE3.
We are offering SI4401DDY-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SI4401DDY-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SI4401DDY Standard Package 1 Manufacturer Vishay Siliconix Series TrenchFET® Packaging Cut Tape (CT) Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 16.1A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 15mOhm @ 10.2A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 95nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 3007pF @ 20V FET Feature - Power Dissipation (Max) 2.5W (Ta), 6.3W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-SO Package / Case 8-SOIC (0.154", 3.90mm Width)
SI4401DDY-T1-GE3 - Related ProductsMore >>
FQD5P10TM ON Semiconductor, P-Channel 100V 3.6A (Tc) 2.5W (Ta), 25W (Tc) Surface Mount D-Pak, QFET®
View
SQS401EN-T1_GE3 Vishay Siliconix, P-Channel 40V 16A (Tc) 62.5W (Tc) Surface Mount PowerPAK® 1212-8, TrenchFET®
View
PMV100XPEAR Nexperia USA Inc., P-Channel 20V 2.4A (Ta) 463mW (Ta), 1.9W (Tc) Surface Mount TO-236AB,
View
ZXMP6A13FTA Diodes Incorporated, P-Channel 60V 900mA (Ta) 625mW (Ta) Surface Mount SOT-23-3,
View
IXTH10P50P IXYS, P-Channel 500V 10A (Tc) 300W (Tc) Through Hole TO-247 (IXTH), PolarP™
View
FDS6673BZ ON Semiconductor, P-Channel 30V 14.5A (Ta) 2.5W (Ta) Surface Mount 8-SOIC, PowerTrench®
View
SI7119DN-T1-E3 Vishay Siliconix, P-Channel 200V 3.8A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8, TrenchFET®
View
ATP102-TL-H ON Semiconductor, P-Channel 30V 40A (Ta) 40W (Tc) Surface Mount ATPAK,
View
FDS6575 ON Semiconductor, P-Channel 20V 10A (Ta) 2.5W (Ta) Surface Mount 8-SOIC, PowerTrench®
View
SI1013X-T1-GE3 Vishay Siliconix, P-Channel 20V 350mA (Ta) 250mW (Ta) Surface Mount SC-89-3, TrenchFET®
View
DMP4047SK3-13 Diodes Incorporated, P-Channel 40V 20A (Tc) 1.6W (Ta) Surface Mount TO-252,
View
ZXMP7A17GTA Diodes Incorporated, P-Channel 70V 2.6A (Ta) 2W (Ta) Surface Mount SOT-223,
View
SI4401DDY-T1-GE3 - Tags
English
