SISH615ADN-T1-GE3


SISH615ADN-T1-GE3

Part NumberSISH615ADN-T1-GE3

Manufacturer

Description

Datasheet

Package / CasePowerPAK® 1212-8SH

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

SISH615ADN-T1-GE3 - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet
Standard Package1
ManufacturerVishay Siliconix
SeriesTrenchFET® Gen III
PackagingCut Tape (CT)
Part StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C22.1A (Ta), 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 10V
Rds On (Max) @ Id, Vgs4.4mOhm @ 20A, 10V
Vgs(th) (Max) @ Id1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs183nC @ 10V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds5590pF @ 10V
FET Feature-
Power Dissipation (Max)3.7W (Ta), 52W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® 1212-8SH
Package / CasePowerPAK® 1212-8SH

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SISH615ADN-T1-GE3 - Tags

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