SI2369DS-T1-GE3
SI2369DS-T1-GE3
Part Number SI2369DS-T1-GE3 Description MOSFET P-CH 30V 7.6A TO-236 Package / Case TO-236-3, SC-59, SOT-23-3Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description P-Channel 30V 7.6A (Tc) 1.25W (Ta), 2.5W (Tc) Surface Mount TO-236
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SI2369DS-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SI2369DS Standard Package 1 Manufacturer Vishay Siliconix Series TrenchFET® Packaging Cut Tape (CT) Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 7.6A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 29mOhm @ 5.4A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 36nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1295pF @ 15V FET Feature - Power Dissipation (Max) 1.25W (Ta), 2.5W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-236 Package / Case TO-236-3, SC-59, SOT-23-3
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