Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIHB15N60E-GE3

SIHB15N60E-GE3

SIHB15N60E-GE3

Part NumberSIHB15N60E-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 600V 15A DPAK

DatasheetSiHB15N60E

Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 600V 15A (Tc) 180W (Tc) Surface Mount D2PAK

To learn about the specification of SIHB15N60E-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIHB15N60E-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIHB15N60E-GE3.
We are offering SIHB15N60E-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIHB15N60E-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SiHB15N60E
Standard Package	1000
Manufacturer	Vishay Siliconix
Series	-
Packaging	Bulk
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25°C	15A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	280mOhm @ 8A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	78nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	1350pF @ 100V
FET Feature	-
Power Dissipation (Max)	180W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	D2PAK
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

SIHB15N60E-GE3 - Related Products

	IRFS4410ZTRLPBF	Infineon Technologies, N-Channel 100V 97A (Tc) 230W (Tc) Surface Mount D2PAK, HEXFET®	View
	IPP60R080P7XKSA1	Infineon Technologies, N-Channel 600V 37A (Tc) 129W (Tc) Through Hole PG-TO220-3, CoolMOS™ P7	View
	FDMC010N08C	ON Semiconductor, N-Channel 80V 11A (Ta), 51A (Tc) 2.4W (Ta), 52W (Tc) Surface Mount Power33, PowerTrench®	View
	SSM3K15AFU,LF	Toshiba Semiconductor and Storage, N-Channel 30V 100mA (Ta) 150mW (Ta) Surface Mount USM, U-MOSIII	View
	FDD8780	ON Semiconductor, N-Channel 25V 35A (Tc) 50W (Tc) Surface Mount TO-252AA, PowerTrench®	View
	STP60NF10	STMicroelectronics, N-Channel 100V 80A (Tc) 300W (Tc) Through Hole TO-220AB, STripFET™ II	View
	SIRA64DP-T1-RE3	Vishay Siliconix, N-Channel 30V 60A (Tc) 27.8W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET® Gen IV	View
	IRFP360PBF	Vishay Siliconix, N-Channel 400V 23A (Tc) 280W (Tc) Through Hole TO-247-3,	View
	BSC886N03LSGATMA1	Infineon Technologies, N-Channel 30V 13A (Ta), 65A (Tc) 2.5W (Ta), 39W (Tc) Surface Mount PG-TDSON-8-1, OptiMOS™	View
	IRLU120NPBF	Infineon Technologies, N-Channel 100V 10A (Tc) 48W (Tc) Through Hole IPAK (TO-251), HEXFET®	View
	SIA106DJ-T1-GE3	Vishay Siliconix, N-Channel 60V 10A (Ta), 12A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6 Single, TrenchFET® Gen IV	View
	TK3R1E04PL,S1X	Toshiba Semiconductor and Storage, N-Channel 40V 100A (Tc) 87W (Tc) Through Hole TO-220, U-MOSIX-H	View

SIHB15N60E-GE3 - Tags

SIHB15N60E-GE3 SIHB15N60E-GE3 PDF SIHB15N60E-GE3 datasheet SIHB15N60E-GE3 specification SIHB15N60E-GE3 image SIHB15N60E-GE3 India Renesas Electronics India SIHB15N60E-GE3 buy SIHB15N60E-GE3 SIHB15N60E-GE3 price SIHB15N60E-GE3 distributor SIHB15N60E-GE3 supplier SIHB15N60E-GE3 wholesales