IPB180N04S4H0ATMA1
IPB180N04S4H0ATMA1
Part Number IPB180N04S4H0ATMA1 Description MOSFET N-CH 40V 180A TO263-7-3 Package / Case TO-263-7, D²Pak (6 Leads + Tab)Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 40V 180A (Tc) 250W (Tc) Surface Mount PG-TO263-7-3
To learn about the specification of IPB180N04S4H0ATMA1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add IPB180N04S4H0ATMA1 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of IPB180N04S4H0ATMA1.
We are offering IPB180N04S4H0ATMA1 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
IPB180N04S4H0ATMA1 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IPB180N04S4-H0 Standard Package 1000 Manufacturer Infineon Technologies Series OptiMOS™ Packaging Tape & Reel (TR) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 180A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 1.1mOhm @ 100A, 10V Vgs(th) (Max) @ Id 4V @ 180µA Gate Charge (Qg) (Max) @ Vgs 225nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 17940pF @ 25V FET Feature - Power Dissipation (Max) 250W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-TO263-7-3 Package / Case TO-263-7, D²Pak (6 Leads + Tab)
IPB180N04S4H0ATMA1 - Related ProductsMore >>
DMT8012LK3-13 Diodes Incorporated, N-Channel 80V 44A (Tc) 2.7W (Ta) Surface Mount TO-252,
View
BUK6D43-60EX Nexperia USA Inc., N-Channel 60V 5A (Ta) 15W (Tc) Surface Mount DFN2020MD-6, Automotive, AEC-Q101
View
R5021ANX Rohm Semiconductor, N-Channel 500V 21A (Tc) 50W (Tc) Through Hole TO-220FM,
View
IRFR3410TRLPBF Infineon Technologies, N-Channel 100V 31A (Tc) 3W (Ta), 110W (Tc) Surface Mount D-Pak, HEXFET®
View
SI2314EDS-T1-E3 Vishay Siliconix, N-Channel 20V 3.77A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236), TrenchFET®
View
IRF7807ZTRPBF Infineon Technologies, N-Channel 30V 11A (Ta) 2.5W (Ta) Surface Mount 8-SO, HEXFET®
View
BUK9606-40B,118 Nexperia USA Inc., N-Channel 40V 75A (Tc) 203W (Tc) Surface Mount D2PAK, Automotive, AEC-Q101, TrenchMOS™
View
DMN62D0UW-7 Diodes Incorporated, N-Channel 60V 340mA (Ta) 320mW (Ta) Surface Mount SOT-323,
View
SIHP24N65E-E3 Vishay Siliconix, N-Channel 650V 24A (Tc) 250W (Tc) Through Hole TO-220AB,
View
FDD86326 ON Semiconductor, N-Channel 80V 8A (Ta), 37A (Tc) 3.1W (Ta), 62W (Tc) Surface Mount D-PAK (TO-252), PowerTrench®
View
FCD360N65S3R0 ON Semiconductor, N-Channel 650V 10A (Tc) 83W (Tc) Surface Mount D-PAK (TO-252), SuperFET® III
View
IXTP1N100 IXYS, N-Channel 1000V 1.5A (Tc) 54W (Tc) Through Hole TO-220AB,
View
IPB180N04S4H0ATMA1 - Tags
English
