IPB019N08N3GATMA1


IPB019N08N3GATMA1

Part NumberIPB019N08N3GATMA1

Manufacturer

Description

Datasheet

Package / CaseTO-263-7, D²Pak (6 Leads + Tab)

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

IPB019N08N3GATMA1 - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet
Standard Package1
ManufacturerInfineon Technologies
SeriesOptiMOS™
PackagingCut Tape (CT)
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)80V
Current - Continuous Drain (Id) @ 25°C180A (Tc)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs1.9mOhm @ 100A, 10V
Vgs(th) (Max) @ Id3.5V @ 270µA
Gate Charge (Qg) (Max) @ Vgs206nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds14200pF @ 40V
FET Feature-
Power Dissipation (Max)300W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO263-7
Package / CaseTO-263-7, D²Pak (6 Leads + Tab)

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IPB019N08N3GATMA1 - Tags

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