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IPB019N08N3GATMA1

IPB019N08N3GATMA1

Part NumberIPB019N08N3GATMA1

ManufacturerInfineon Technologies

DescriptionMOSFET N-CH 80V 180A TO263-7

DatasheetIPB019N08N3 G

Package / CaseTO-263-7, D²Pak (6 Leads + Tab)

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 80V 180A (Tc) 300W (Tc) Surface Mount PG-TO263-7

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IPB019N08N3GATMA1 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IPB019N08N3 G
Standard Package	1
Manufacturer	Infineon Technologies
Series	OptiMOS™
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	80V
Current - Continuous Drain (Id) @ 25°C	180A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	1.9mOhm @ 100A, 10V
Vgs(th) (Max) @ Id	3.5V @ 270µA
Gate Charge (Qg) (Max) @ Vgs	206nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	14200pF @ 40V
FET Feature	-
Power Dissipation (Max)	300W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TO263-7
Package / Case	TO-263-7, D²Pak (6 Leads + Tab)

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