Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIE882DF-T1-GE3

SIE882DF-T1-GE3

SIE882DF-T1-GE3

Part NumberSIE882DF-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 25V 60A POLARPAK

DatasheetSIE882DF

Package / Case10-PolarPAK® (L)

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 25V 60A (Tc) 5.2W (Ta), 125W (Tc) Surface Mount 10-PolarPAK® (L)

To learn about the specification of SIE882DF-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIE882DF-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIE882DF-T1-GE3.
We are offering SIE882DF-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIE882DF-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIE882DF
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	25V
Current - Continuous Drain (Id) @ 25°C	60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	1.4mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	145nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	6400pF @ 12.5V
FET Feature	-
Power Dissipation (Max)	5.2W (Ta), 125W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	10-PolarPAK® (L)
Package / Case	10-PolarPAK® (L)

SIE882DF-T1-GE3 - Related Products

	IXFQ34N50P3	IXYS, N-Channel 500V 34A (Tc) 695W (Tc) Through Hole TO-3P, HiPerFET™, Polar3™	View
	SIRA00DP-T1-GE3	Vishay Siliconix, N-Channel 30V 100A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®	View
	SI2306BDS-T1-GE3	Vishay Siliconix, N-Channel 30V 3.16A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236), TrenchFET®	View
	IPL65R230C7AUMA1	Infineon Technologies, N-Channel 650V 10A (Tc) 67W (Tc) Surface Mount PG-VSON-4, CoolMOS™ C7	View
	STD2N95K5	STMicroelectronics, N-Channel 950V 2A (Tc) 45W (Tc) Surface Mount DPAK, SuperMESH5™	View
	RS1E130GNTB	Rohm Semiconductor, N-Channel 30V 13A (Ta) 3W (Ta), 22.2W (Tc) Surface Mount 8-HSOP,	View
	SI3404-TP	Micro Commercial Co, N-Channel 30V 5.8A 350mW Surface Mount SOT-23,	View
	IPD90N03S4L03ATMA1	Infineon Technologies, N-Channel 30V 90A (Tc) 94W (Tc) Surface Mount PG-TO252-3, OptiMOS™	View
	STD6N60M2	STMicroelectronics, N-Channel 600V 4.5A (Tc) 60W (Tc) Surface Mount DPAK, MDmesh™ II Plus	View
	IPB029N06N3GATMA1	Infineon Technologies, N-Channel 60V 120A (Tc) 188W (Tc) Surface Mount D²PAK (TO-263AB), OptiMOS™	View
	STP27N60M2-EP	STMicroelectronics, N-Channel 600V 20A (Tc) 170W (Tc) Through Hole TO-220, MDmesh™ M2-EP	View
	BUK9214-30A,118	Nexperia USA Inc., N-Channel 30V 63A (Tc) 107W (Tc) Surface Mount DPAK, Automotive, AEC-Q101, TrenchMOS™	View

SIE882DF-T1-GE3 - Tags

SIE882DF-T1-GE3 SIE882DF-T1-GE3 PDF SIE882DF-T1-GE3 datasheet SIE882DF-T1-GE3 specification SIE882DF-T1-GE3 image SIE882DF-T1-GE3 India Renesas Electronics India SIE882DF-T1-GE3 buy SIE882DF-T1-GE3 SIE882DF-T1-GE3 price SIE882DF-T1-GE3 distributor SIE882DF-T1-GE3 supplier SIE882DF-T1-GE3 wholesales