Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI2336DS-T1-GE3

SI2336DS-T1-GE3

SI2336DS-T1-GE3

Part NumberSI2336DS-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 30V 5.2A SOT-23

DatasheetSi2336DS

Package / CaseTO-236-3, SC-59, SOT-23-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 30V 5.2A (Tc) 1.25W (Ta), 1.8W (Tc) Surface Mount SOT-23-3 (TO-236)

To learn about the specification of SI2336DS-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI2336DS-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI2336DS-T1-GE3.
We are offering SI2336DS-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI2336DS-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	Si2336DS
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	5.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Rds On (Max) @ Id, Vgs	42mOhm @ 3.8A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	15nC @ 8V
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	560pF @ 15V
FET Feature	-
Power Dissipation (Max)	1.25W (Ta), 1.8W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-3 (TO-236)
Package / Case	TO-236-3, SC-59, SOT-23-3

SI2336DS-T1-GE3 - Related Products

	RD3L080SNFRATL	Rohm Semiconductor, N-Channel 60V 8A (Ta) 15W (Tc) Surface Mount TO-252, Automotive, AEC-Q101	View
	IPB011N04NGATMA1	Infineon Technologies, N-Channel 40V 180A (Tc) 250W (Tc) Surface Mount PG-TO263-7-3, OptiMOS™	View
	TK35A65W5,S5X	Toshiba Semiconductor and Storage, N-Channel 650V 35A (Ta) 50W (Tc) Through Hole TO-220SIS, DTMOSIV	View
	DMT4004LPS-13	Diodes Incorporated, N-Channel 40V 26A (Ta), 90A (Tc) 2.6W (Ta), 138W (Tc) Surface Mount PowerDI5060-8, Automotive, AEC-Q101	View
	STP3NK60Z	STMicroelectronics, N-Channel 600V 2.4A (Tc) 45W (Tc) Through Hole TO-220AB, SuperMESH™	View
	SI4634DY-T1-E3	Vishay Siliconix, N-Channel 30V 24.5A (Tc) 2.5W (Ta), 5.7W (Tc) Surface Mount 8-SO, TrenchFET®	View
	DMN3065LW-7	Diodes Incorporated, N-Channel 30V 4A (Ta) 770mW (Ta) Surface Mount SOT-323,	View
	ZXMN10A25GTA	Diodes Incorporated, N-Channel 100V 2.9A (Ta) 2W (Ta) Surface Mount SOT-223,	View
	DMT6009LPS-13	Diodes Incorporated, N-Channel 60V 10.6A (Ta), 87A (Tc) 2.3W (Ta) Surface Mount PowerDI5060-8, Automotive, AEC-Q101	View
	DMN6040SVT-7	Diodes Incorporated, N-Channel 60V 5A (Ta) 1.2W (Ta) Surface Mount TSOT-26,	View
	DMN15H310SE-13	Diodes Incorporated, N-Channel 150V 2A (Ta), 7.1A (Tc) 1.9W (Ta) Surface Mount SOT-223,	View
	RV3C002UNT2CL	Rohm Semiconductor, N-Channel 20V 150mA (Ta) 100mW (Ta) Surface Mount VML0604,	View

SI2336DS-T1-GE3 - Tags

SI2336DS-T1-GE3 SI2336DS-T1-GE3 PDF SI2336DS-T1-GE3 datasheet SI2336DS-T1-GE3 specification SI2336DS-T1-GE3 image SI2336DS-T1-GE3 India Renesas Electronics India SI2336DS-T1-GE3 buy SI2336DS-T1-GE3 SI2336DS-T1-GE3 price SI2336DS-T1-GE3 distributor SI2336DS-T1-GE3 supplier SI2336DS-T1-GE3 wholesales