Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI2336DS-T1-GE3

SI2336DS-T1-GE3

SI2336DS-T1-GE3

Part NumberSI2336DS-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 30V 5.2A SOT-23

DatasheetSi2336DS

Package / CaseTO-236-3, SC-59, SOT-23-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 30V 5.2A (Tc) 1.25W (Ta), 1.8W (Tc) Surface Mount SOT-23-3 (TO-236)

To learn about the specification of SI2336DS-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI2336DS-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI2336DS-T1-GE3.
We are offering SI2336DS-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI2336DS-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	Si2336DS
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	5.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Rds On (Max) @ Id, Vgs	42mOhm @ 3.8A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	15nC @ 8V
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	560pF @ 15V
FET Feature	-
Power Dissipation (Max)	1.25W (Ta), 1.8W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-3 (TO-236)
Package / Case	TO-236-3, SC-59, SOT-23-3

SI2336DS-T1-GE3 - Related Products

	SIA466EDJ-T1-GE3	Vishay Siliconix, N-Channel 20V 25A (Tc) 3.5W (Ta), 19.2W (Tc) Surface Mount PowerPAK® SC-70-6 Single, TrenchFET®	View
	PSMN013-60YLX	Nexperia USA Inc., N-Channel 60V 53A (Tc) 95W (Tc) Surface Mount LFPAK56, Power-SO8,	View
	IXFN56N90P	IXYS, N-Channel 900V 56A (Tc) 1000W (Tc) Chassis Mount SOT-227B, Polar™	View
	IRFS4410ZTRLPBF	Infineon Technologies, N-Channel 100V 97A (Tc) 230W (Tc) Surface Mount D2PAK, HEXFET®	View
	BUK964R8-60E,118	Nexperia USA Inc., N-Channel 60V 100A (Tc) 234W (Tc) Surface Mount D2PAK, Automotive, AEC-Q101, TrenchMOS™	View
	IRF200S234	Infineon Technologies, N-Channel 200V 90A 417W (Tc) Surface Mount D2PAK,	View
	PMZB600UNEYL	Nexperia USA Inc., N-Channel 20V 600mA (Ta) 360mW (Ta), 2.7W (Tc) Surface Mount DFN1006B-3,	View
	BUK763R9-60E,118	Nexperia USA Inc., N-Channel 60V 100A (Tc) 263W (Tc) Surface Mount D2PAK, Automotive, AEC-Q101, TrenchMOS™	View
	STD5N95K3	STMicroelectronics, N-Channel 950V 4A (Tc) 90W (Tc) Surface Mount DPAK, SuperMESH3™	View
	IXFX98N50P3	IXYS, N-Channel 500V 98A (Tc) 1300W (Tc) Through Hole PLUS247™-3, HiPerFET™, Polar3™	View
	TK560A60Y,S4X	Toshiba Semiconductor and Storage, N-Channel 600V 7A (Tc) 30W Through Hole TO-220SIS, DTMOSV	View
	ZXMN3A03E6TA	Diodes Incorporated, N-Channel 30V 3.7A (Ta) 1.1W (Ta) Surface Mount SOT-23-6,	View

SI2336DS-T1-GE3 - Tags

SI2336DS-T1-GE3 SI2336DS-T1-GE3 PDF SI2336DS-T1-GE3 datasheet SI2336DS-T1-GE3 specification SI2336DS-T1-GE3 image SI2336DS-T1-GE3 India Renesas Electronics India SI2336DS-T1-GE3 buy SI2336DS-T1-GE3 SI2336DS-T1-GE3 price SI2336DS-T1-GE3 distributor SI2336DS-T1-GE3 supplier SI2336DS-T1-GE3 wholesales