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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IPx7xCN10N G, IPx80CN10N G
Standard Package 2500
Manufacturer Infineon Technologies
Series OptiMOS™
Packaging Tape & Reel (TR)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 13A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 78mOhm @ 13A, 10V
Vgs(th) (Max) @ Id 4V @ 12µA
Gate Charge (Qg) (Max) @ Vgs 11nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 716pF @ 50V
FET Feature -
Power Dissipation (Max) 31W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
R6020ENZ1C9
Rohm Semiconductor, N-Channel 600V 20A (Tc) 120W (Tc) Through Hole TO-247,
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IRFL214TRPBF
Vishay Siliconix, N-Channel 250V 790mA (Tc) 2W (Ta), 3.1W (Tc) Surface Mount SOT-223,
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APT36N90BC3G
Microsemi Corporation, N-Channel 900V 36A (Tc) 390W (Tc) Through Hole TO-247 [B], CoolMOS™
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IPA041N04NGXKSA1
Infineon Technologies, N-Channel 40V 70A (Tc) 35W (Tc) Through Hole PG-TO220-FP, OptiMOS™
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FQP8N60C
ON Semiconductor, N-Channel 600V 7.5A (Tc) 147W (Tc) Through Hole TO-220-3, QFET®
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TSM4NB65CI C0G
Taiwan Semiconductor Corporation, N-Channel 650V 4A (Tc) 70W (Tc) Through Hole ITO-220AB,
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FQU4N50TU-WS
ON Semiconductor, N-Channel 500V 2.6A (Tc) 2.5W (Ta), 45W (Tc) Through Hole I-PAK, QFET®
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TSM4ND60CI
Taiwan Semiconductor Corporation, N-Channel 600V 4A (Tc) 41.6W (Tc) Through Hole ITO-220,
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FDMA7670
ON Semiconductor, N-Channel 30V 11A (Ta) 2.4W (Ta) Surface Mount 6-MicroFET (2x2), PowerTrench®
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STP16N65M5
STMicroelectronics, N-Channel 650V 12A (Tc) 90W (Tc) Through Hole TO-220-3, MDmesh™ V
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IPP80R900P7XKSA1
Infineon Technologies, N-Channel 800V 6A (Tc) 45W (Tc) Through Hole PG-TO220-3, CoolMOS™ P7
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FDMS7660AS
ON Semiconductor, N-Channel 30V 26A (Ta), 42A (Tc) 2.5W (Ta), 83W (Tc) Surface Mount 8-PQFN (5x6), PowerTrench®, SyncFET™
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