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SI8812DB-T2-E1

SI8812DB-T2-E1

Part NumberSI8812DB-T2-E1

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 20V MICROFOOT

DatasheetSi8812DB

Package / Case4-UFBGA

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 20V 500mW (Ta) Surface Mount 4-Microfoot

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SI8812DB-T2-E1 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	Si8812DB
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	-
Drive Voltage (Max Rds On, Min Rds On)	1.2V, 4.5V
Rds On (Max) @ Id, Vgs	59mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	17nC @ 8V
Vgs (Max)	±5V
FET Feature	-
Power Dissipation (Max)	500mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	4-Microfoot
Package / Case	4-UFBGA

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