SI8812DB-T2-E1
SI8812DB-T2-E1
Part Number SI8812DB-T2-E1 Description MOSFET N-CH 20V MICROFOOT Package / Case 4-UFBGAUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 20V 500mW (Ta) Surface Mount 4-Microfoot
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SI8812DB-T2-E1 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet Si8812DB Standard Package 1 Manufacturer Vishay Siliconix Series TrenchFET® Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C - Drive Voltage (Max Rds On, Min Rds On) 1.2V, 4.5V Rds On (Max) @ Id, Vgs 59mOhm @ 1A, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 17nC @ 8V Vgs (Max) ±5V FET Feature - Power Dissipation (Max) 500mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 4-Microfoot Package / Case 4-UFBGA
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