Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIHB065N60E-GE3

SIHB065N60E-GE3

SIHB065N60E-GE3

Part NumberSIHB065N60E-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET E SERIES 600V D2PAK (TO-2

DatasheetSIHB065N60E

Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 600V 40A (Tc) 250W (Tc) Surface Mount D²PAK (TO-263)

To learn about the specification of SIHB065N60E-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIHB065N60E-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIHB065N60E-GE3.
We are offering SIHB065N60E-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIHB065N60E-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIHB065N60E
Standard Package	1000
Manufacturer	Vishay Siliconix
Series	E
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25°C	40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	65mOhm @ 16A, 10V
Vgs(th) (Max) @ Id	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	74nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	2700pF @ 100V
FET Feature	-
Power Dissipation (Max)	250W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	D²PAK (TO-263)
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

SIHB065N60E-GE3 - Related Products

	IRFB3306GPBF	Infineon Technologies, N-Channel 60V 120A (Tc) 230W (Tc) Through Hole TO-220AB, HEXFET®	View
	MCU60N04-TP	Micro Commercial Co, N-Channel 40V 60A 1.25W Surface Mount D-Pak,	View
	APL502J	Microsemi Corporation, N-Channel 500V 52A (Tc) 568W (Tc) Chassis Mount ISOTOP®,	View
	ZXMN4A06GTA	Diodes Incorporated, N-Channel 40V 5A (Ta) 2W (Ta) Surface Mount SOT-223,	View
	STD170N4F7AG	STMicroelectronics, N-Channel 40V 80A (Tc) 172W (Tc) Surface Mount DPAK, Automotive, AEC-Q101, STripFET™	View
	STL11N6F7	STMicroelectronics, N-Channel 60V 11A (Ta) 2.9W (Ta), 48W (Tc) Surface Mount PowerFlat™ (3.3x3.3), STripFET™	View
	STI57N65M5	STMicroelectronics, N-Channel 650V 42A (Tc) 250W (Tc) Through Hole I2PAK (TO-262), MDmesh™ V	View
	NTS4001NT1G	ON Semiconductor, N-Channel 30V 270mA (Ta) 330mW (Ta) Surface Mount SC-70-3 (SOT323),	View
	SQ3456BEV-T1_GE3	Vishay Siliconix, N-Channel 30V 7.8A (Tc) 4W (Tc) Surface Mount 6-TSOP, TrenchFET®	View
	SIHP30N60AEL-GE3	Vishay Siliconix, N-Channel 600V 28A (Tc) 250W (Tc) Through Hole TO-220AB, EL	View
	STL40N10F7	STMicroelectronics, N-Channel 100V 40A (Tc) 5W (Ta), 70W (Tc) Surface Mount PowerFlat™ (5x6), DeepGATE™, STripFET™ VII	View
	STD100N3LF3	STMicroelectronics, N-Channel 30V 80A (Tc) 110W (Tc) Surface Mount DPAK, STripFET™ II	View

SIHB065N60E-GE3 - Tags

SIHB065N60E-GE3 SIHB065N60E-GE3 PDF SIHB065N60E-GE3 datasheet SIHB065N60E-GE3 specification SIHB065N60E-GE3 image SIHB065N60E-GE3 India Renesas Electronics India SIHB065N60E-GE3 buy SIHB065N60E-GE3 SIHB065N60E-GE3 price SIHB065N60E-GE3 distributor SIHB065N60E-GE3 supplier SIHB065N60E-GE3 wholesales