AON2260
AON2260
Part Number AON2260
Description MOSFET N CH 60V 6A DFN 2x2B
Package / Case 6-UDFN Exposed Pad
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Lead Time To be Confirmed
Detailed Description N-Channel 60V 6A (Ta) 2.8W (Ta) Surface Mount 6-DFN-EP (2x2)
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AON2260 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet AON2260
Standard Package 1
Manufacturer Alpha & Omega Semiconductor Inc.
Series -
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 44mOhm @ 6A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 426pF @ 30V
FET Feature -
Power Dissipation (Max) 2.8W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 6-DFN-EP (2x2)
Package / Case 6-UDFN Exposed Pad
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2N7000-D26Z
ON Semiconductor, N-Channel 60V 200mA (Ta) 400mW (Ta) Through Hole TO-92-3,
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ZXMN2A01E6TA
Diodes Incorporated, N-Channel 20V 2.5A (Ta) 1.1W (Ta) Surface Mount SOT-23-6,
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Vishay Siliconix, N-Channel 100V 18A (Tc) 3.8W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8, TrenchFET®
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IXYS, N-Channel 200V 70A (Tc) 690W (Tc) Surface Mount TO-268, HiPerFET™
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IPD025N06NATMA1
Infineon Technologies, N-Channel 60V 90A (Tc) 3W (Ta), 167W (Tc) Surface Mount PG-TO252-3, OptiMOS™
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SI3430DV-T1-E3
Vishay Siliconix, N-Channel 100V 1.8A (Ta) 1.14W (Ta) Surface Mount 6-TSOP,
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CSD19537Q3
Texas Instruments, N-Channel 100V 50A (Ta) 2.8W (Ta), 83W (Tc) Surface Mount 8-VSON (3.3x3.3), NexFET™
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IPP020N08N5AKSA1
Infineon Technologies, N-Channel 80V 120A (Tc) 375W (Tc) Through Hole PG-TO220-3, OptiMOS™
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PSMN4R0-30YLDX
Nexperia USA Inc., N-Channel 30V 95A (Tc) 64W (Tc) Surface Mount LFPAK56, Power-SO8, TrenchMOS™
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NVD3055-150T4G-VF01
ON Semiconductor, N-Channel 60V 9A (Ta) 1.5W (Ta), 28.8W (Tj) Surface Mount DPAK,
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