Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SISA26DN-T1-GE3

SISA26DN-T1-GE3

SISA26DN-T1-GE3

Part NumberSISA26DN-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 25V 60A POWERPAK1212

DatasheetSISA26DN

Package / CasePowerPAK® 1212-8S

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 25V 60A (Tc) 39W (Tc) Surface Mount PowerPAK® 1212-8S (3.3x3.3)

To learn about the specification of SISA26DN-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SISA26DN-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SISA26DN-T1-GE3.
We are offering SISA26DN-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SISA26DN-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SISA26DN
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET® Gen IV
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	25V
Current - Continuous Drain (Id) @ 25°C	60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	2.65mOhm @ 15A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	44nC @ 10V
Vgs (Max)	+16V, -12V
Input Capacitance (Ciss) (Max) @ Vds	2247pF @ 10V
FET Feature	-
Power Dissipation (Max)	39W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 1212-8S (3.3x3.3)
Package / Case	PowerPAK® 1212-8S

SISA26DN-T1-GE3 - Related Products

	SUM40010EL-GE3	Vishay Siliconix, N-Channel 40V 120A (Tc) 375W (Tc) Surface Mount D²PAK (TO-263), ThunderFET®	View
	DMTH4005SK3Q-13	Diodes Incorporated, N-Channel 40V 95A (Tc) 2.1W (Ta), 100W (Tc) Surface Mount TO-252 (DPAK), Automotive, AEC-Q101	View
	SI4634DY-T1-E3	Vishay Siliconix, N-Channel 30V 24.5A (Tc) 2.5W (Ta), 5.7W (Tc) Surface Mount 8-SO, TrenchFET®	View
	MVGSF1N03LT1G	ON Semiconductor, N-Channel 30V 1.6A (Ta) 420mW (Ta) Surface Mount SOT-23,	View
	STW40NF20	STMicroelectronics, N-Channel 200V 40A (Tc) 160W (Tc) Through Hole TO-247-3, STripFET™	View
	IXFQ30N60X	IXYS, N-Channel 600V 30A (Tc) 500W (Tc) Through Hole TO-3P, HiPerFET™	View
	RD3T075CNTL1	Rohm Semiconductor, N-Channel 200V 7.5A (Tc) 52W (Tc) Surface Mount TO-252,	View
	FDS5670	ON Semiconductor, N-Channel 60V 10A (Ta) 2.5W (Ta) Surface Mount 8-SOIC, PowerTrench®	View
	BSZ088N03LSGATMA1	Infineon Technologies, N-Channel 30V 12A (Ta), 40A (Tc) 2.1W (Ta), 35W (Tc) Surface Mount PG-TSDSON-8, OptiMOS™	View
	IXFP4N85XM	IXYS, N-Channel 850V 3.5A (Tc) 35W (Tc) Through Hole TO-220, HiPerFET™	View
	SI1302DL-T1-E3	Vishay Siliconix, N-Channel 30V 600mA (Ta) 280mW (Ta) Surface Mount SC-70-3, TrenchFET®	View
	TSM60N06CP ROG	Taiwan Semiconductor Corporation, N-Channel 60V 66A (Tc) 44.6W (Tc) Surface Mount TO-252, (D-Pak),	View

SISA26DN-T1-GE3 - Tags

SISA26DN-T1-GE3 SISA26DN-T1-GE3 PDF SISA26DN-T1-GE3 datasheet SISA26DN-T1-GE3 specification SISA26DN-T1-GE3 image SISA26DN-T1-GE3 India Renesas Electronics India SISA26DN-T1-GE3 buy SISA26DN-T1-GE3 SISA26DN-T1-GE3 price SISA26DN-T1-GE3 distributor SISA26DN-T1-GE3 supplier SISA26DN-T1-GE3 wholesales