Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI4435DDY-T1-GE3

SI4435DDY-T1-GE3

SI4435DDY-T1-GE3

Part NumberSI4435DDY-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 30V 11.4A 8-SOIC

DatasheetSi4435DDY

Package / Case8-SOIC (0.154", 3.90mm Width)

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 30V 11.4A (Tc) 2.5W (Ta), 5W (Tc) Surface Mount 8-SO

To learn about the specification of SI4435DDY-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI4435DDY-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI4435DDY-T1-GE3.
We are offering SI4435DDY-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI4435DDY-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	Si4435DDY
Standard Package	2500
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	11.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	24mOhm @ 9.1A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	50nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1350pF @ 15V
FET Feature	-
Power Dissipation (Max)	2.5W (Ta), 5W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-SO
Package / Case	8-SOIC (0.154", 3.90mm Width)

SI4435DDY-T1-GE3 - Related Products

	RSD160P05TL	Rohm Semiconductor, P-Channel 45V 16A (Ta) 20W (Tc) Surface Mount CPT3,	View
	SSM3J144TU,LF	Toshiba Semiconductor and Storage, P-Channel 20V 3.2A (Ta) 500mW (Ta) Surface Mount UFM, U-MOSVI	View
	SI2315BDS-T1-E3	Vishay Siliconix, P-Channel 12V 3A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236), TrenchFET®	View
	RSM002P03T2L	Rohm Semiconductor, P-Channel 30V 200mA (Ta) 150mW (Ta) Surface Mount VMT3,	View
	IPD90P03P4L04ATMA1	Infineon Technologies, P-Channel 30V 90A (Tc) 137W (Tc) Surface Mount PG-TO252-3, Automotive, AEC-Q101, OptiMOS™	View
	DMP32D4S-7	Diodes Incorporated, P-Channel 30V 300mA (Ta) 370mW (Ta) Surface Mount SOT-23,	View
	IRF9520STRLPBF	Vishay Siliconix, P-Channel 100V 6.8A (Tc) 3.7W (Ta), 60W (Tc) Surface Mount D2PAK,	View
	BSO130P03SHXUMA1	Infineon Technologies, P-Channel 30V 9.2A (Ta) 1.56W (Ta) Surface Mount P-DSO-8, OptiMOS™	View
	SSM3J130TU,LF	Toshiba Semiconductor and Storage, P-Channel 20V 4.4A (Ta) 500mW (Ta) Surface Mount UFM, U-MOSVI	View
	SQ9407EY-T1_GE3	Vishay Siliconix, P-Channel 60V 4.6A (Tc) 3.75W (Tc) Surface Mount 8-SO, Automotive, AEC-Q101, TrenchFET®	View
	FDS4435BZ	ON Semiconductor, P-Channel 30V 8.8A (Ta) 2.5W (Ta) Surface Mount 8-SOIC, PowerTrench®	View
	SSM3J132TU,LF	Toshiba Semiconductor and Storage, P-Channel 12V 5.4A (Ta) 500mW (Ta) Surface Mount UFM, U-MOSVI	View

SI4435DDY-T1-GE3 - Tags

SI4435DDY-T1-GE3 SI4435DDY-T1-GE3 PDF SI4435DDY-T1-GE3 datasheet SI4435DDY-T1-GE3 specification SI4435DDY-T1-GE3 image SI4435DDY-T1-GE3 India Renesas Electronics India SI4435DDY-T1-GE3 buy SI4435DDY-T1-GE3 SI4435DDY-T1-GE3 price SI4435DDY-T1-GE3 distributor SI4435DDY-T1-GE3 supplier SI4435DDY-T1-GE3 wholesales