Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI4435DDY-T1-E3

SI4435DDY-T1-E3

SI4435DDY-T1-E3

Part NumberSI4435DDY-T1-E3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 30V 11.4A 8SOIC

DatasheetSi4435DDY

Package / Case8-SOIC (0.154", 3.90mm Width)

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 30V 11.4A (Tc) 2.5W (Ta), 5W (Tc) Surface Mount 8-SO

To learn about the specification of SI4435DDY-T1-E3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI4435DDY-T1-E3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI4435DDY-T1-E3.
We are offering SI4435DDY-T1-E3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI4435DDY-T1-E3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	Si4435DDY
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	11.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	24mOhm @ 9.1A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	50nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1350pF @ 15V
FET Feature	-
Power Dissipation (Max)	2.5W (Ta), 5W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-SO
Package / Case	8-SOIC (0.154", 3.90mm Width)

SI4435DDY-T1-E3 - Related Products

	SIA817EDJ-T1-GE3	Vishay Siliconix, P-Channel 30V 4.5A (Tc) 1.9W (Ta), 6.5W (Tc) Surface Mount PowerPAK® SC-70-6 Dual, LITTLE FOOT®	View
	IRLML6402TRPBF	Infineon Technologies, P-Channel 20V 3.7A (Ta) 1.3W (Ta) Surface Mount Micro3™/SOT-23, HEXFET®	View
	SIA421DJ-T1-GE3	Vishay Siliconix, P-Channel 30V 12A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6 Single, TrenchFET®	View
	FQPF11P06	ON Semiconductor, P-Channel 60V 8.6A (Tc) 30W (Tc) Through Hole TO-220F, QFET®	View
	NTNUS3171PZT5G	ON Semiconductor, P-Channel 20V 150mA (Ta) 125mW (Ta) Surface Mount SOT-1123,	View
	LP0701LG-G	Microchip Technology, P-Channel 16.5V 700mA (Tj) 1.5W (Tc) Surface Mount 8-SOIC,	View
	FDS6375	ON Semiconductor, P-Channel 20V 8A (Ta) 2.5W (Ta) Surface Mount 8-SOIC, PowerTrench®	View
	IRF6216TRPBF	Infineon Technologies, P-Channel 150V 2.2A (Ta) 2.5W (Ta) Surface Mount 8-SO, HEXFET®	View
	SQ2389ES-T1_GE3	Vishay Siliconix, P-Channel 40V 4.1A (Tc) 3W (Tc) Surface Mount SOT-23-3 (TO-236), Automotive, AEC-Q101, TrenchFET®	View
	SSM3J132TU,LF	Toshiba Semiconductor and Storage, P-Channel 12V 5.4A (Ta) 500mW (Ta) Surface Mount UFM, U-MOSVI	View
	SI2315BDS-T1-GE3	Vishay Siliconix, P-Channel 12V 3A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236), TrenchFET®	View
	ATP101-TL-H	ON Semiconductor, P-Channel 30V 25A (Ta) 30W (Tc) Surface Mount ATPAK,	View

SI4435DDY-T1-E3 - Tags

SI4435DDY-T1-E3 SI4435DDY-T1-E3 PDF SI4435DDY-T1-E3 datasheet SI4435DDY-T1-E3 specification SI4435DDY-T1-E3 image SI4435DDY-T1-E3 India Renesas Electronics India SI4435DDY-T1-E3 buy SI4435DDY-T1-E3 SI4435DDY-T1-E3 price SI4435DDY-T1-E3 distributor SI4435DDY-T1-E3 supplier SI4435DDY-T1-E3 wholesales