Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI4103DY-T1-GE3

SI4103DY-T1-GE3

SI4103DY-T1-GE3

Part NumberSI4103DY-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CHAN 30V SO-8

DatasheetSI4103DY

Package / Case8-SOIC (0.154", 3.90mm Width)

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 30V 14A (Ta), 16A (Tc) 2.5W (Ta), 5.2W (Tc) Surface Mount 8-SO

To learn about the specification of SI4103DY-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI4103DY-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI4103DY-T1-GE3.
We are offering SI4103DY-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI4103DY-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI4103DY
Standard Package	2500
Manufacturer	Vishay Siliconix
Series	TrenchFET® Gen III
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	14A (Ta), 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	7.9mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	140nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	5200pF @ 15V
FET Feature	-
Power Dissipation (Max)	2.5W (Ta), 5.2W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-SO
Package / Case	8-SOIC (0.154", 3.90mm Width)

SI4103DY-T1-GE3 - Related Products

	DMP32D4SFB-7B	Diodes Incorporated, P-Channel 30V 400mA (Ta) 500mW (Ta) Surface Mount 3-DFN1006 (1.0x0.6),	View
	SI2315BDS-T1-GE3	Vishay Siliconix, P-Channel 12V 3A (Ta) 750mW (Ta) Surface Mount, TrenchFET®	View
	PMV50EPEAR	Nexperia USA Inc., P-Channel 30V 4.2A (Ta) 310mW (Ta), 455mW (Tc) Surface Mount TO-236AB,	View
	DMP45H21DHE-13	Diodes Incorporated, P-Channel 450V 600mA (Tc) 12.5W (Tc) Surface Mount SOT-223,	View
	FDS9431A-F085	ON Semiconductor, P-Channel 20V 3.5A (Ta) 2.5W (Ta) Surface Mount 8-SOIC, Automotive, AEC-Q101	View
	BSP92PH6327XTSA1	Infineon Technologies, P-Channel 250V 260mA (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4, SIPMOS®	View
	IRFL9014TRPBF	Vishay Siliconix, P-Channel 60V 1.8A (Tc) 2W (Ta), 3.1W (Tc) Surface Mount SOT-223,	View
	SI4413ADY-T1-E3	Vishay Siliconix, P-Channel 30V 10.5A (Ta) 1.5W (Ta) Surface Mount 8-SO, TrenchFET®	View
	SSM3J374R,LF	Toshiba Semiconductor and Storage, P-Channel 30V 4A (Ta) 1W (Ta) Surface Mount SOT-23F, U-MOSVI	View
	IRF9Z24NSTRLPBF	Infineon Technologies, P-Channel 55V 12A (Tc) 3.8W (Ta), 45W (Tc) Surface Mount D2PAK, HEXFET®	View
	FDMC5614P	ON Semiconductor, P-Channel 60V 5.7A (Ta), 13.5A (Tc) 2.1W (Ta), 42W (Tc) Surface Mount 8-MLP (3.3x3.3), PowerTrench®	View
	SI1403BDL-T1-E3	Vishay Siliconix, P-Channel 20V 1.4A (Ta) 568mW (Ta) Surface Mount SC-70-6 (SOT-363), TrenchFET®	View

SI4103DY-T1-GE3 - Tags

SI4103DY-T1-GE3 SI4103DY-T1-GE3 PDF SI4103DY-T1-GE3 datasheet SI4103DY-T1-GE3 specification SI4103DY-T1-GE3 image SI4103DY-T1-GE3 India Renesas Electronics India SI4103DY-T1-GE3 buy SI4103DY-T1-GE3 SI4103DY-T1-GE3 price SI4103DY-T1-GE3 distributor SI4103DY-T1-GE3 supplier SI4103DY-T1-GE3 wholesales